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Electronics, magnetics and photonics


Carrier transport, photonics and sensing in group IV-based and other semiconductors nanodevices

The new composites, nanostructures and designs of group IV materials provide a platform for advanced devices for Nanoelectronics, Photonics and Sensors. The symposium will focus on group IV materials but also other semiconductors, nanostructures and related devices with the objective to bring together scientists working in different application fields.


The scope of the proposed symposium will include experimental and theoretical innovations related to group IV and other semiconductors nanoelectronics, nanophotonics and nanosensing. An emphasis will be made on high mobility materials suitable for fast devices, light emission and light absorption.

These topics have attracted an increasing attention in the recent years for various applications, including infrared communication and imaging. The very critical issues are therefore carrier transport properties and lifetimes which will be reflected in the symposium program. The photonic devices of particular interest are detectors, light emitting sources, waveguides, optical modulators. Additional topics in the symposium scope are defect characterization, engineering and the impact of crystal quality on the properties of electronic and photonic devices.

Moreover, integrated photonic devices are recently emerging in the field of biological and chemical sensing by allowing ultra-high sensing performances and efficient CMOS-compatible systems. Simulations and calculations of nanodevices, predicting their physical properties and performances are vital to successful device design and optimization. This is particularly important for nanoscale devices, where conventional approximations can no longer be applied.

The symposium will bring together the whole chain starting with novel technological and scientific developments in the field of material synthesis; subsequently, material characterization, device design and fabrication; and finally, device characterization, simulation and modeling. New applications will be welcomed as well.

Hot topics to be covered by the symposium:

  • Fabrication and characterization of group IV- nanostructures, nano-devices and nano-sensors
  • Carrier transport in nano-devices
  • Optoelectronic materials and nano-devices using Si-based hetero-structures and nanostructures
  • Integration of photonics with Si CMOS technology
  • Strain band-gap engineering and carrier transport in CMOS
  • Si-based optical modulators, switches and detectors
  • Si-based waveguide technology and nano-devices
  • Luminescence in Si-based materials
  • Photonic crystals
  • Integrated waveguide sensing
  • Nanomaterials for life science applications
  • Nanoscale biosensors
  • Defect engineering and characterization
  • New mechanisms of crystal growth and synthesis
  • Nano-structuration and self-organization
  • 2D materials based on group IV materials

List of confirmed invited speakers:

  • Steve Koester (University of Minnesota) USA: The latest developments in 2D materials and devices 
  • Cor Claeys (KU Leuven) Belgium: Trends and Challenges in the Fabrication of Nano-Scaled Devices
  • Eddy Simeon (IMEC) Belgium: Low-frequency noise of nanowire transistors
  • Douglas Paul (Glasgow University) UK: Quantum Communication and Lidar Applications using Ge on Si Single Photon Avalanche Detectors at Short Wave Infrared Wavelengths
  • Jan Linnros, (KTH Royal Institute of Technology) Sweden: The latest developments in silicon-based biosensors 
  • Guoping Guo, (University of Science and Technology of China, Hefei) China: Quantum computation based on semiconductor quantum dot
  • Wolgang Skrupa (Helmholtz-Zentrum Dresden-Rossendorf) Germany: Advanced materials through photonic annealing
  • Zoran Ikonic (University of Leeds) UK: GeSn materials for photonic and electronic applications
  • Guilei Wang (Chinese Academy of Sciences) China: Advanced GeOI fabrication and application
  • Karthik Shankar (University of Alberta) Canada: High Quality Electrodeposited ZnO for Power Electronics and Optoelectronics
  • Yakov Roizin (TowerJazz & Tel Aviv University) Israel: An approach to the end of CMOS Technology Roadmap

Tentative list of scientific committee members:

  • Philippe Fauchet (Vanderbilt University), USA
  • Jun Xu (Tsinghua University), China
  • Amir Natan (Tel Aviv University), Israel
  • Anders Hallén (KTH Royal Institute of Technology), Sweden
  • Jun Luo (Chinese Academy of Science), China
  • Andrej Kuznetsov (University of Oslo), Norway
  • Dimitris Tsoukalas (National Technical University of Athens), Greece
  • Rasit Turan (Middle East Technical University), Turkey
  • Lisik Zbigniew (Technical University of Lodz), Poland
  • Wei.Xin Ni (Linköping University), Sweden
  • Luca Maresca (University of Napoli Federico II), Italy


Manuscripts will be published in a reputable and refereed journal: Materials Science Journal: Materials in Electronics, Springer.

Graduate Student awards:

Five selected member of scientific committee will rank independently the work of young scientists. Top 3 presentations/posters will be critically reviewed and a winner will be selected.

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Symposium organizers

Via Ferdinando Stagno D’Alcontres, 98168 Messina, Italy

Arie RUZINTel Aviv University

Haim Levanon st., 69978 Tel Aviv, Israel

+972 3 6405214
Henry H. RADAMSONMid Sweden University

Holmgatan 10, 85170 Sundsvall, Sweden & Chinese Academy of Sciences, Department of Microelectronics, 100029 Beijing, China

+46 702287355 & +86 18311498633 &

Campus de St Jérôme – Case 142 – 13397 Marseille Cedex 20, France

+33 491 28 91 63 / +33 687 28 23 48