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Materials research for group IV semiconductors: growth, characterization and technological developments IV

Group IV semiconductors lie at the heart of many electronic and photovoltaic devices. Major challenges for fundamental research and technological development are no longer confined to bulk silicon, but also to other group IV materials and a wide variety of silicon-based structures, such as alloys, nanostructured and nanocomposite materials, composite systems, thin and thick films, and heteroepitaxy on patterned silicon substrates. Advances in device performance are underpinned by new defect engineering procedures, development of novel growth techniques, and improvements in advanced diagnostic tools. Point and extended defects remain at the center of interest, and in some cases their engineering represents an option for new functionalities (e.g. spintronic devices).

Scope:

Crystal growth

  • Modeling of defect generation and modeling of crystal growth
  • Crystal growth for solar applications
  • Control of carbon, phosphorus and boron in solar grade silicon
  • Growth of group IV alloy crystals
  • Wafering technologies and defect evolution in wafering processes
  • Large diameter crystal growth with emphasis on 450mm diameter wafers
  • Low quality polycrystalline silicon refinement

Nanostructures of/ on group IV semiconductors

  • Layer deposition for electronic and photovoltaic applications
  • Nanocrystalline materials
  • Quantum wires, nanosheet/ nanowire/ gate-all-around transistors, and quantum dots

Heteroepitaxy on silicon

  • Perovskites on silicon for photovoltaic applications
  • Selective epitaxy for advanced electronic applications
  • Strain engineering in strained layer epitaxy
  • Heterogeneous integration of Si or Ge with III-V epitaxial device quality layers
  • Defects at heteroepitaxial merging on patterned Si
  • Epitaxial deposition of nitrides and SiC on silicon substrates
  • Novel methods for the growth of graphene, silicene and germanene on silicon
  • Modelling and simulation of epitaxial structures

Thin layer technology

  • Deposition of amorphous and crystalline thin layers
  • Surface passivation of silicon for photovoltaics
  • Silicon membranes

Basic research on point defects and extended defects

  • Defects causing light induced degradation of solar silicon
  • Vacancy and interstitial related point defect complexes with oxygen, nitrogen, carbon, and hydrogen
  • Complexes of dopants with intrinsic point defects and light elements
  • Diffusivity of impurities and intrinsic point defects
  • Modelling and simulation of extended defects

Gettering and defect engineering

  • Gettering of metallic impurities and impurity precipitation in silicon
  • Interaction of metals with dopants, impurity atoms and extended defects
  • Defect engineered and defect-free silicon wafers
  • Dislocation engineering by substrate and process optimization

Technological applications for group IV semiconductors

  • Thin layer and multilayer solar cells
  • High speed and high frequency electronic devices
  • Power devices
  • SOI and sSOI devices
  • Silicon-based light emitting devices
  • Spintronics
  • Thermo-mechanical systems

Hot topics to be covered by the symposium:

  • Perovskite-on-silicon solar cells.
  • Group IV nanowires.
  • Silicon for high efficiency PV devices.
  • Light emission from silicon-integrated devices.
  • Quasi-mono crystalline silicon for photovoltaic applications.
  • Fabrication, doping and characteristics of two dimensional allotropes.
  • Spintronics.
  • Vertical membranes for FinFETS.
  • Defects at heteroepitaxial merging on patterned Si.
  • Materials for power devices.

Tentative list of scientific committee members:

  • Simona Binetti (University Milano-Bicocca, Italy)
  • Sebastian Bonilla (University of Oxford, UK)
  • Stefan Estreicher (Texas Tech University, USA)
  • Matthew Halsall (University of Manchester, UK)
  • Masataka Hourai (SUMCO, Japan)
  • Oleg Kononchuk (SOITEC, France)
  • Sergio Pizzini (University of Milano-Bicocca, Italy)
  • Hele Savin (Aalto University, Finland)
  • Eddy Simoen (IMEC and Ghent University, Belgium)
  • Yuji Takakuwa (Tohoku University, Japan)
  • Jun Xu (Nanjing University, China)
  • Shigeaki Zaima (Meijo University, Japan)

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Symposium organizers
Chioko KANETAFujitsu Laboratories Ltd.

10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

+81 46 250 8212
kaneta.chioko@jp.fujitsu.com
Deren YANGZhejiang University

State Key Lab of Silicon Materials Zheda Road 38# Hangzhou 310027 P. R. China

+86 571 87951667
mseyang@zju.edu.cn
Gudrun KISSINGER

IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany

+49 335 5625 388
gkissinger@ihp-microelectronics.com
John MURPHYUniversity of Warwick

School of Engineering, University of Warwick, Coventry, CV4 7AL, UK

+44 24 765 75378
john.d.murphy@warwick.ac.uk