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Terahertz materials, devices and systems

The symposium will address topics related to the THz properties of innovative materials that may lead to novel devices and systems. Special accent will be put on THz properties of Graphene and topological semiconductor structures in view of their applications for future THz technology.


The symposium aims to address the subjects related to new materials (like topological and Dirac matter for example) and new physical phenomena (like plasmonic instabilities and population inversion in materials with massless fermions for example) that may lead to innovative THz devices detectors, filters, modulators, amplifiers and sources. They will be considered in view of their application to passive and active imaging systems for quality control and medicine, as well as for security screening and wireless communication systems. It is expected to demonstrate how new physical phenomena, new advances in materials technology (metamaterials) as well as innovative devices design may lead to development of new high performance THZ systems. Special accent will be put to THz properties of Graphene and graphene- like materials as well as to different topological phases of semiconductor heterostructures of III-V or II-VI materials ( like HgCdTe or GaSb/InAs quantum wells for example). It is supposed that the meeting will gather specialists in modelling, simulation, fabrication and characterization of basic physical properties of these innovative materials and made of them devices. Independently the symposium has as an objective to make review of recent developments of THz components and systems based on traditional semiconductor technology. The questions of the choice of the best semiconductor technology for THz imaging and wireless communications will be addressed. Industrial partners will be invited to present the problems of THz technology market and the problem of so called “key applications”. Particular attention will be devoted to the realization of sensors for focal plane arrays for real-time imaging. The feasibility of the THz active and passive vision systems will be discussed.

Summarizing, the objectives of this symposium are to review the current state of the art in THz components and systems in USA, Asia and Europe (worldwide), to provide a clear view on the current technologies and the required advances in material science and devices to achieve more efficient systems The Symposium aims to discuss limits of existing materials  and discuss the  question if the new class of materials like Graphene like semiconductors or topological insulators structures can bring important advances in THz technology.

Hot topics to be covered by the symposium:

  • New materials:

          - HgCdTe based Dirac matter;
          - Graphene and Graphene –like materials;
          - III-V and II-VI heterojunctions with topological insulators properties.

  • New THz devices emerging from basic material physical phenomena;
  • Design and fabrication of new THz detectors and sources.

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Symposium organizers
Jerzy ŁUSAKOWSKIUniversity of Warsaw

L. Pasteura 5, 02-093 Warsaw, Poland
Taiichi OTSUJITohoku University

Research Institute of Electrical Communication, 2-1-1 Katahira, Aoba-ku, Sendai, 9808577, Japan

Institute for Physics of Microstructures, RAS, GSP-105, 603950, Nizhny Novgorod, Russia
Wojciech KNAP CNRS & Montpellier University

Charles Coulomb Laboratory, Place. E. Bataillon, 34950 Montpellier, France