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OXIDES, FERROELECTRICS

Q

(Hf,Zr)O2-based ferroelectrics: from fundamentals to applications

HfO2/ZrO2-based ferroelectrics have been referred to as “the ferroelectrics of the future”, because they retain their polar nature down to a few nanometers and are fully compatible with modern CMOS technology. However, their full application potential and fundamental science behind the formation of ferroelectricity are still being discovered.

Scope:

In the first years after the report of ferroelectricity in Si:HfO2 thin films, people with background in semiconductor industry immediately started investigating the potential of the materials for ferroelectric memories with both capacitor- and transistor-based concepts. As HfO2 and ZrO2 are already integrated as dielectrics in state-of-the-art devices, the idea of “simply making them ferroelectric” to establish a non-volatile memory device was highly attractive. A few years later, the potential for steep-slope transistors utilizing the negative-capacitance effect (NC-FETs) was recognized and formed today’s second major branch of application-driven research on the topic of fluorite-type ferroelectrics.

This very applied perspective, however, caused a much slower pace toward fundamental understanding of the formation of this ferroelectric behavior. Moreover, researchers with a strong background in ferroelectrics remained a bit skeptical at first as it was very surprising that such properties had been overlooked in such well-studied oxides. In recent years, the understanding solidified and the communities started interacting. Nonetheless, there is still a lot to be done, both theoretically and experimentally.

Meanwhile, applied research did not stop and further applications beyond the abovementioned memories and low-power logic devices have been suggested. Today, the range of applications is broad and includes neuromorphic computing, energy storage and energy harvesting, piezo- and pyroelectric devices in general, decoupling capacitors, microwave antennas, and phase shifters.

The aim of this symposium is to provide a platform:

  • for people working on these material to gain insights into applications up to industrial level
  • for applied and fundamental researchers to connect and exchange
  • that serves as a step stone for people who consider starting to get engaged in this exciting and quickly growing new field

Hot topics to be covered by the symposium:

  • Novel growth and fabrication schemes
  • Fundamental insights from theory and experiments
  • Electric field cycling behavior: root causes and solutions
  • Negative-capacitance effect and NC-FETs
  • Emerging ferroelectric memories (capacitors-based FRAM, FE-FETs, FTJs and novel concepts)
  • Piezo- and pyroelectric properties and related applications
  • Neuromorphics and further applications
  • Application insights and viewpoints from industrial partners

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Symposium organizers
Min Hyuk PARKSchool of Materials Science and Engineering, Pusan National University

2, Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea

minhyukpark@pusan.ac.kr
Sergey V. BARABASHIntermolecular Inc., a subsidiary of Merck KGaA, Darmstadt, Germany

3011 North First St., San Jose, CA 95134, USA

sergey.barabash@intermolecular.com
Tony SCHENKMaterials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST)

41 Rue du Brill, L-4422 Belvaux, Luxembourg

tony.schenk@list.lu