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2020 Fall Meeting



(Hf,Zr)O2-based ferroelectrics: from fundamentals to applications

HfO2/ZrO2-based ferroelectrics have been referred to as “the ferroelectrics of the future”, because they retain their polar nature down to a few nanometers and are fully compatible with modern CMOS technology. However, their full application potential and fundamental science behind the formation of ferroelectricity are still being discovered.


In the first years after the report of ferroelectricity in Si:HfO2 thin films, people with background in semiconductor industry immediately started investigating the potential of the materials for ferroelectric memories with both capacitor- and transistor-based concepts. As HfO2 and ZrO2 are already integrated as dielectrics in state-of-the-art devices, the idea of “simply making them ferroelectric” to establish a non-volatile memory device was highly attractive. A few years later, the potential for steep-slope transistors utilizing the negative-capacitance effect (NC-FETs) was recognized and formed today’s second major branch of application-driven research on the topic of fluorite-type ferroelectrics.

This very applied perspective, however, caused a much slower pace toward fundamental understanding of the formation of this ferroelectric behavior. Moreover, researchers with a strong background in ferroelectrics remained a bit skeptical at first as it was very surprising that such properties had been overlooked in such well-studied oxides. In recent years, the understanding solidified and the communities started interacting. Nonetheless, there is still a lot to be done, both theoretically and experimentally.

Meanwhile, applied research did not stop and further applications beyond the abovementioned memories and low-power logic devices have been suggested. Today, the range of applications is broad and includes neuromorphic computing, energy storage and energy harvesting, piezo- and pyroelectric devices in general, decoupling capacitors, microwave antennas, and phase shifters.

The aim of this symposium is to provide a platform:

  • for people working on these material to gain insights into applications up to industrial level
  • for applied and fundamental researchers to connect and exchange
  • that serves as a step stone for people who consider starting to get engaged in this exciting and quickly growing new field

Hot topics to be covered by the symposium:

  • Novel growth and fabrication schemes
  • Fundamental insights from theory and experiments
  • Electric field cycling behavior: root causes and solutions
  • Negative-capacitance effect and NC-FETs
  • Emerging ferroelectric memories (capacitors-based FRAM, FE-FETs, FTJs and novel concepts)
  • Piezo- and pyroelectric properties and related applications
  • Neuromorphics and further applications
  • Application insights and viewpoints from industrial partners

Invited Speakers from Academia:

  • Cheol Seong Hwang (Seoul National University, South Korea): "Charge boosting in stacked ferroelectric/dielectric layers based on transient negative capacitance effect in (Hf,Zr)O2 film."
  • Uwe Schroeder (NaMLab gGmbH, Germany): [Overview on Ferroelectric HfO2] 
  • Evgeny Tsymbal (Univ. of Nebraska, United States): “Reversible spin texture in ferroelectric oxides” 
  • Mircea Dragoman (National Institute for Research and Development in Microtechnologies - IMT Bucharest, Romania): "Microwave and THz devices using HfO2-based ferroelectrics"
  • Takao Shimizu or Hiroshi Funakubo (Tokyo Institute of Technology, Japan): "Electric field driven phase changes in epitaxial HfO2-based ferroelectric films"
  • Roozbeh Tabrizian (Univ. Florida): [M/NEMS: HfO2-based Acoustic Resonators] 
  • Michael Hoffmann (NaMLab gGmbH, Germany): "Negative Capacitance in HfO2- and ZrO2-based materials"
  • Alexei Gruverman (Univ. of Nebraska, United States): [Nanoscopic Insights into Electric Field Cycling Behavior.]
  • Seung Chul Chae (Seoul National University, South Korea): "Stable Sub-Loop Behavior in Ferroelectric Si-Doped HfO2" 
  • Alfred Kersch (Munich University of Applied Science, Gemany): "Characteristics of doped hafnia and zirconia from DFT calculations"
  • Sanghun Jeon (KAIST, South Korea): "Non volatile ferroelectric tunnel junction  for neuromorphic  device application"

Invited Industry Contributions:

  • Sabine Kolodinski (Globalfoundries Inc., Germany): [View from Industry and Report on their activities on NC-FETs, AFE-RAM, FeFET, Pyroelectric applications]
  • Jaegil Lee (SK Hynix, South Korea): "Ferroelectric Device Applications & Challenges"
  • Anders Blom (Synopsys Inc. United States): [Capabilities of a New Simulation Framework for Ferroic Materials] 
  • Milan Pesic (Applied Materials Inc., United States): "Physical Mechanisms and Reliability of Ferroelectric Memories"
  • Stefan Müller (Ferroelectric Memory GmbH, Germany):  [Ferroelectric HfO2 and its Impact on the Memory Landscape] 
  • Shingo Yoneda (Murata Manufacturing Co. Ltd., Japan): "Nonlinear Polarization Response of HfO2-based Thin Films Fabricated by Chemical Solution Deposition"        
  • Bert Jan Offrein (IBM Research Zurich, Switzerland): [Neuromorphic Devices Based on FE HfO2]

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Symposium organizers
Min Hyuk PARKDepartment of Materials Science and Engineering, College of Engineering, Seoul National University

1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
Sergey V. BARABASHIntermolecular Inc.

3011 North First St., San Jose, CA 95134, USA
Tony SCHENKFerroelectric Memory GmbH

Dresden, Germany