III-nitrides and their use in electronics and optoelectronics

The symposium is planned as a platform for exchanging research results and discussions related to III-nitride semiconductor growth, characterization and device fabrication. This includes traditional materials: GaN, InGaN, AlGaN, as well as so-called new nitrides: NbN, ScAlN.

Scope:

The scope of the symposium covers the most popular topics related to III-nitride fabrication and technology. The subjects can be divided into the following main groups.

a)    Growth of nitride semiconductors

Our interest begins at the level of growth of bulk crystals: GaN, AlN, useful for the further steps of the nitride technology. Next, the scope includes the challenges of nitride epitaxial growth by metalorganic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). Our interest also spans from typical lateral growth to more complex 3D growth of nanostructures. Finally, we will cover the emerging fields of growth of novel nitride materials such as NbN and ScAlN.

b)    Material characterization

We encourage abstracts related to various aspects and methods of material studies. Our interest includes research on dopants and defects in nitride semiconductors. We will also cover the problem of microstructural analysis of nitride devices.

c)    Optoelectronics

We are interested in the subject of nitride light emitting diodes including current important trends: UV LEDs and the use of micro-LEDs for fabrication of efficient RGB displays. The program also covers nitride laser diodes, edge-emitting as well as vertical-cavity surface-emitting lasers (VCSELs), both in visible and UV region. We are also open to novel concepts such as photonic integrated circuits.

d)    Electronics

The symposium will include all the trending nitride electronics topics. We will cover the power and radio frequency (RF) electron devices. We also plan a dedicated session for semi-vertical and vertical electronic devices. We welcome submissions on metal-oxide-semiconductor (MOS) structures. Finally, the program will include AlN-based electronic devices.

Hot topics to be covered by the symposium:

• AlN-based electronic devices
• Defects in gallium nitride
• Micro and nano nitride light emitters
• Novel nitride materials
• Red-emitting nitrides
• Reliability of nitride devices
• UV nitride emitters
• Vertical electronic devices

Invited speakers:

• Oliver Ambacher (Department of Sustainable Systems Engineering, University of Freiburg, Germany)
• Peter Brückner (Fraunhofer Institute for Applied Solid State Physics IAF, Germany)
• Patrick Diehle (Center for Applied Microstructure Diagnostics, Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany)
• Åsa Haglund (Department Microtechnology and Nanoscience, Chalmers University of Technology, Sweden)
• Debdeep Jena (Electrical and Computer Engineering and Materials Science and Engineering, Cornell University, USA)
• Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics IAF, Germany)
• Takeru Kumabe (Department of electronics, Nagoya University, Japan)
• Atsushi Kobayashi (Department of Materials Science and Technology, Tokyo University of Science, Japan)
• Kei May Lau (Department of Electronic & Computer Engineering, Hong Kong University of Science and Technology)
• Irene Manglano Clavero (Faculty of Electrical Engineering, Information Technology, Physics, Technical University of Braunschweig, Germany)
• Kazuhiro Ohkawa (Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Techn., Saudi Arabia)
• Jose Pedro (Instituto de Telecomunicações, University of Aveiro, Portugal)
• Filip Tuomisto (Department of Physics, University of Helsinki, Finland)
• Giovanni Verzellesi (Department of Sciences and Methods for Engineering, University of Modena and Reggio Emilia, Italy)
• Tim Wernicke (Institute of Solid-State Physics, Technical University of Berlin, Germany)