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INFORMATION AND COMMUNICATION TECHNOLOGIES

G

Diamond for Electronic Devices IV

The continued evolution of diamond growth and technology has led to new opportunities in detectors, high power and high voltage electronics, superconductivity and quantum photonics. This has been strongly driven by advances in the growth technology such as high purity and now large area substrates becoming commercially available.

Scope

Several topics will be of particular interest at this meeting, although papers on all aspects of diamond technology are welcome. These include diamond for power electronics, diamond nano-electronic devices, diamond for quantum applications and diamond for bio-devices. In all cases, man-made single crystalline diamond is used either as ultra-pure layer or semiconducting by boron and phosphorus doping. The growth and deposition of high quality diamond films will therefore be a subtopic at the symposium. Quantum metrology applications (for example, magnetrometry based on NV centres) is of key interest. Doping of diamond is a key topic using both boron and phosphorus. in case of phosphorus and boron doping. New areas such as the integration of diamond GaN, Wafer bonding to materials will be given close attention.

Hot topics to be covered by the symposium

  • Wafer bonding of diamond to electronic materials
  • Growth of high purity diamond
  • Doping of diamond
  • Polishing and low damage removal of material
  • Biological interaction with diamond surfaces and devices
  • Surface functionalisation
  • Single Photon Sources (NV, SiV etc)
  • Superconductivity and superconducting devices
  • Micro and Nano – Electromechanical Systems
  • Diamond RF and power devices

List of invited speakers:

  • Yamaguchi Takahide (National Institute of Materials Science, Tsukuba, Japan)
    “Field effect transistor based on diamond/h-BN heterostructures”
  • Mete Atature (University of Cambridge, UK)
    “Strain manipulation of SiV colour centers in diamond”
  • Richard Jackman (University College London, UK)
    “Diamond nanowires with ballistic transport and their use for the first diamond FIN-FET technology”
  • Gavin Morley (University of Warwick, UK)
    “Levitated nanodiamonds towards fundamental physics”
  • David Eon (Institut Néel, Grenoble, France)
    “Diamond Schottky diodes parallelization for high current”
  • David Moran (University of Glasgow, UK)
    “Progress in the development of transfer-doped H-diamond devices for high frequency, high power and high temperature applications”
  • Thomas Gerrer (Fraunhofer Institute for Applied Research, Germany)
    “Direct bonding of gallium nitride thin-film transistors onto diamond substrates”
  • Anke Krueger (Bavarian University of Würzburg, Germany)
    “Synthesis and in-depth characterization of highly fluorinated diamond surfaces”
  • Lionel Rousseau (ESIEE Paris, France)
    “Full diamond implants, a new approach for chronical in-vivo applications”

 

Scientific Committee members:

  • Ken Haenen, Hasselt University, Institute for Materials Research (IMO) & Division IMOMEC, Belgium
  • Paul May, School of Chemistry, University of Bristol, UK
  • Ian W. Boyd, Brunel University, Uxbridge, UK
  • Julien Pernot, Université Grenoble Alpes, France

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Symposium organizers
Gauthier CHICOTDiamFab

25 avenue des Martyrs, BP 166, 38042 Grenoble cedex 9, France

gauthier.chicot@diamfab.eu
Hitoshi UMEZAWAAdvanced Power Electronics Research Center

National Institute of Advanced Industrial Science and Technology (AIST), Midorigaoka 1-8-31, Ikeda, Osaka, 563-8577, Japan

hitoshi.umezawa@aist.go.jp
Oliver WILLIAMS Cardiff University

School of Physics and Astronomy, Queen's Buildings, The Parade, Cardiff CF24 3AA, U.K.

williamso@cardiff.ac.uk
Philippe BERGONZOSeki Diamond Systems

San Jose, California, USA

pbergonzo@sekidiamond.com