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Integration of advanced materials on silicon: from classical to quantum applications

The symposium aims at gathering scientists working on monolithic and heterogeneous integration of new materials, to enable additional functionalities on silicon-based platforms. Its originality lies in the fact that it considers both classical approaches and emerging topics linked to quantum applications.

The various research fields covered in the symposium pave the way towards highly functionalized Si-based technologies which address current and future challenges in our society.


The microelectronics industry has delivered faster and more efficient computing devices at a remarkably consistent pace for several decades. This has mostly been achieved by downscaling classical MOS transistors, which continuously provided improved performance and lower energy consumption for every new technology node. These advances have led to the development of highly performing personal computers and low-power mobile devices, which are nowadays affordable for mass population.

More recently, the demand for high performance devices and mass data transfer has soared, driven by new societal needs linked to the “Internet-of-things” and the growing demand for ultra-fast data communication and data transfer, cognitive systems and new computing paradigms, such as quantum information processing.

However, transistors cannot scale down indefinitely. Industrials are therefore looking beyond classic architectures and concepts to secure future generations of devices. Still, the best contenders are likely to be those that can be integrated with conventional silicon chip platform.

For quantum information science, silicon is also emerging as a promising route. Elementary silicon qubit devices have been demonstrated with high-fidelity operation highlighting the potential of silicon-based quantum devices in terms of scalability and manufacturability. Programmable quantum circuits based on silicon photonics chip are currently extensively investigated. Even for emerging quantum materials that are not widely used in the industry, like topological insulators, quantum-dots structures, magnetic or superconductor materials, silicon could be a platform of choice for device integration.

The symposium aims to highlight novel and innovative approaches that allow monolithic and heterogeneous integration on silicon technology, targeting CMOS, application-specific integrated solutions or quantum systems.

The scope includes the fundamental understanding of new material properties, the implementation of novel integration schemes, the modeling techniques and new application fields. The focus will be on the fabrication, characterization and simulation of materials considered as non-standard for Si technology. Contributions related to innovative hetero-integration techniques will be encouraged. Finally, a particular attention will be given to devices and applications beyond current computation technologies that aim at addressing new computing paradigms such as quantum and neuromorphic computation. The productive interaction across disciplines will help materials scientists drive the exciting transition towards higher-value, highly functionalized Si-based microelectronics.

Hot topics to be covered by the symposium

Material growth, characterization and simulation:

Group IV and compound semiconductors:

Group IV materials and alloys (SiGe, GeSn SiGeSn), III-V and II-VI compound semiconductors, grown or transferred on monocrystalline substrates or insulators. Group IV and III-V quantum dots and nanowires integrated on Si.

Oxides and nitrides:

Functional perovskites, ZnO, GaN and heterostructures, oxides with resistive or metal insulator transition, topological insulators, piezoelectric materials.

2 dimensional materials:

Growth and transfer of Graphene, Transition Metal Dichalcogenides and Boron Nitride on semiconductors, hybrid 2D/semiconductor devices.

Novel materials for Quantum applications

Semiconductor/Superconductor Interfaces, Topological insulators, Semiconductor Quantum Dot qubit Materials, purified 28Si, Spin qubit, Si/SiGe Heterostructures

Integration Techniques: 

Advanced heteroepitaxy:

Selective growth on patterned substrates, epitaxial lateral overgrowth, self-assembly techniques, remote epitaxy.

Layer Transfer

2.5D & 3D integration (monolithic & heterogeneous)

Innovative synthesis & integration methods of materials and devices used for quantum systems


Data processing and communication:

Advanced CMOS scaling, single electron & single photon devices, neuromorphic architectures, IOT, spintronics, ultra-low power & RF electronics, Integrated photonics, IR and THz lasers.

Quantum information science and emerging applications of quantum materials

Quantum communication, quantum computing, quantum sensing.

Life-Sciences application and environmental sensors:

Semiconductor plasmonics, mid-infrared and THz sensing, gas sensors, integration with piezo-materials for MEMS-like sensors and opto-mechanics

List of invited speakers:

  • Abderraouf Boucherif, Sherbrooke University, Canada.
  • Ageeth A. Bol, Eindhoven University of Technology, The Netherlands.
  • Akira Toriumi, Tokyo University, Japan.
  • Antonio di Bartolomeo, Università degli Studi di Salerno, Italy.
  • Detlev Grutzmacher, Forschungszentrum Jülich, Germany.
  • Douglas Paul, Glasgow University, UK.
  • Farid Medjdoub, IEMN / CNRS, France.
  • Giordano Scappucci, QUTech, TU-Delft, The Netherlands.
  • Jonatan Slotte, Aalto University, Finland.
  • Luca Pirro, Global Foundries Dresden, Germany.
  • Lukas Czornomaz, IBM Zurich, Switzerland.
  • Maud Vinet, CEA/LETI, France.
  • Nikolay Abrosimov, IKZ Berlin, Germany.
  • Thierry Baron, LTM/CNRS, France.
  • Thierry Taliercio, Univ Montpellier, CNRS, IES, France.

Scientific Committee members:

  • R. Calarco, PDI Berlin, Germany.
  • M. De Seta, Univ. of Roma, Italy.
  • T. Ernst, CEA/LETI, France.
  • M. Brehm, JKU Linz, Austria.
  • G. Patriarche, CNRS Saclay, France.
  • V. Kaganer, PDI Berlin, Germany.
  • H. Liu, U.C. London, UK.
  • M. Cousineau, INP/CNRS, France.
  • B. Vincent - Coventor/LAM.
  • Voigt, TU Dresden, Germany.

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Symposium organizers

Kapeldreef 75, 3001 Leuven, Belgium

Parc Technologique des Fontaines, Chemin des Franques, 38190 Bernin, France
Giovanni ISELLAPolitecnico di Milano

LNESS Dipratimento di Fisica, via Anzani 42, 22100 Como, Italy
Inga Anita FISCHERBrandenburg Technical University

Erich-Weinert-Str. 1, 03046 Cottbus, Germany