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Fabrication and characterization of emerging transparent conductive materials

Transparent conducting materials have been extensively studied in recent years due to the great interest for applications such as photovoltaics, transparent electronics, optoelectronics, light emitting diodes, smart windows, flat panel displays, touch screens and more. This symposium covers various topics from synthesis, characterization to device fabrication with the aim of a better understanding of emerging TCM’s fundamental properties and to improve their integration.


Transparent conductive materials are able to simultaneously conduct electricity and transmit visible light, a valuable dual asset for various application fields like transparent electronics or photovoltaics. There are typically obtained by strongly doping the wide band gap semiconductors, although novel materials (silver nanowires, graphene of carbon nanotubes) got lately into attention. The most commonly used TCM is Tin-doped Indium Oxide (ITO) with a transmittance greater than 80% in the visible range and a n-type electric conductivity up to 1000 S/cm. The lack of a corresponding p-type semiconductor with electrical and optical properties matching these values impedes the fabrication of a fully transparent active device. Moreover, the need for additional functional properties (such as flexibility) and cost efficiency (Indium cost, deposition temperature) require alternative materials:

Recent efforts in field of TCMs are therefore directed at:

- Indium-free TCM as Indium worldwide reserve decreases affecting the prices

- New deposition methods able to fulfill technological and environmental requirements:

             low cost deposition methods;

             reduced processing temperatures,

             reduced solvent use and the avoidance of pollutants.

- p-type semiconductors, crucial for transparent active devices (diodes, transistors, smart windows…)

- Tailoring optoelectronic properties of TCM for a good assimilation within the multi-stacks

- The successful integration of any such emergent TCMs into working devices.

The goal of the proposed symposium is then to address the above-mentioned matters. The latest advances the topical research field of transparent conducting materials will be discussed. The symposium will be concerned with both experimental and theoretical approaches. Topics ranging from fabrication until device integration will be covered.  Various deposition techniques will be discussed as their important influence on the physical properties of materials was intensively reported. A special focus on the relationship between the structure and the properties of thin films will be addressed in order to fabricate materials with novel or substantially improved properties. Deeper theoretical insights into the materials will be sought and correlated to mechanisms responsible for key electrical and optical properties with the goal to develop or validate new TCM related computational techniques. Last but not least aspects related to the fabrication of device with integrated TCM’s will be discussed.

Hot topics to be covered by the symposium

  • Novel p-type TCMs
  • Low temperature thin films’ deposition techniques
  • Transport mechanism in novel amorphous TCMs
  • The source of doping and transport mechanisms in p-type TCOs
  • Simulation and modelling of TCM for understanding the properties
  • Nanostructured TCOs (nanowires, composite, laminates,)
  • Integration of TCM in functional devices
  • Electrical, Optical and Structural analysis of TCM
  • Tailoring the electrical and optical properties of TCM
  • Defect chemistry of TCM

Emerging non-oxide TCM (iodines, oxysulphides)

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Symposium organizers
Antoine BARNABÉUniversité de Toulouse III Paul Sabatier

Bâtiment CIRIMAT, 118 Route de Narbonne, 31062 Toulouse cedex 09, France
Geoffroy HAUTIERUniversité Catholique de Louvain

1348 Louvain-la-Neuve, Belgium
Karsten FLEISCHERDublin City University

School of Physical Sciences, Glasnevin, Dublin 9, Ireland

41 rue de Brill, Belvaux, L-4422, Luxembourg