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Nanoelectronic materials and devices

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Ultra-doped semiconductors by non-equilibrium processing for electronic, photonic and spintronic applications

Doping is the key to making semiconductors functional. Ultra-doping or Hyperdoping refers to introducing dopant concentrations far above the solid solubility limits. This leads to the broadening of dopant energy level into a separated or merged impurity band with interesting consequences in terms of (opto)electronic, magnetic or superconducting properties.

Scope:

In 1931, Wolfgang Pauli said “One shouldn’t work on semiconductors, that is a filthy mess; who knows whether any semiconductors exist”. We know it is doping that makes semiconductor exist and functional. Doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. It is the indispensable step in the integrated-circuit industry production line. The ultra-doping or hyperdoping of semiconductors refers to introducing dopant concentrations far above the solid solubility limits. This leads to the broadening of dopant energy level into a separated or merged impurity band with interesting consequences in terms of optoelectronic, magnetic or superconducting properties. Here, the dopants also include those elements, that are far away from the host semiconductor in the element table and have large ionization energies. By hyperdoping, semiconductors can be turned to metals, superconductors (such as boron doped diamond/Si/Ge), or ferromagnets (such as Mn doped III-V compounds). The applications spread from electronics, spintronics, quantum technology to optoelectronics, with the first practical devices appearing recently. To overcome the solid solubility limit, methods far away from thermal equilibrium, such as ion implantation and low-temperature molecular beam epitaxy, are used. Minimized post-doping thermal process is also necessary to reduce the diffusion. Even so, it is still a question if the introduced dopants are randomly distributed in the substitutional lattice positions. Therefore, proper atomic-scale characterization is also needed to verify the dopant distribution and chemical states. This symposium will be highly interdisciplinary, attracting participants from semiconductor, nanoelectronics, optoelectronics, plasmonics, superconductor and magnetism communities. According to information collected by four proposers, there are >20 groups in Europe, >10 groups in the US, >15 groups in China, >20 groups in Japan and Korea, >10 groups in India and other Asia area, >10 groups in Australia and the rest of the world. There has not been any similar symposium in the last years and it would fit to “Electronics, Magnetics and Photonics”.

Hot topics to be covered by the symposium:

  • Optoelectronic devices based on hyperdoped Si, Ge, III-V and GeSn including photodetectors at infrared wavelength
  • Hyperdoped semiconductors (Si, Ge and III-V) for plasmonics: tunable plasmonic frequency by doping concentration, plasmonic structural design
  • Hyperdoped semiconductors (Si, Ge, SiGe and GeSn) for future field-effect transistors
  • Highly mismatched alloys, such as GeSn, SiGeSn, GaAsN, GaPN …
  • Ferromagnetic semiconductors, including transition metal doped III-V and IV semiconductors and their structural characterization
  • Diamond, Si, Ge and SiC based superconductors: Boron doping, superconducting properties, application for quantum technology
  • Manufacturing hyperdoped and mismatched materials – Out of the equilibrium techniques, including ion implantation, low-temperature molecular beam epitaxy, low-temperature chemical vapor deposition, pulsed laser melting and flash lamp annealing
  • Advanced characterization technologies for impurities and defects at atomic scale: including Atom probe tomography (APT), High resolution transmission electron microscopy, Rutherford backscattering/channeling, Emission channeling, X-ray spectroscopies
  • First-principle calculation regarding the impurity and defect configuration
  • Challenges for doping emerging materials, such as 2D semiconductors, ultra-wide bandgap semiconductors and topological insulators
  • New concepts for doping, such as polarization-induced hole doping in wide-bandgap semiconductors

List of invited speakers:

  • James Williams (ANU, Australia): Advantages and limitations of transition-metal hyperdoping of Si for near-to-mid infrared detection
  • Roger Loo (IMEC, Belgium): Ultra-high doped Si and SiGe for future FETs
  • Slawomir Prucnal (HZDR, Germany): Dissolution of dopant-vacancy clusters in semiconductors
  • David Pastor (Complutense University of Madrid, Spain): Extending spectral photoresponse of semiconductors by ion implantation and ns-laser
  • Inga Fischer (Brandenburg University of Technology, Germany): Highly doped GeSn for plasmonic gratings
  • Robert Kudrawiec (Wroclaw University of Science and Technology, Poland): DLTS studies of native defects in highly mismatched alloys
  • Xiaodong Pi (Zhejiang Univ., China): Doped silicon nanocrystals: synthesis, properties and devices
  • Jacob Krich (U. Ottawa, Canada): tbd
  • Hailong Wang (IOP/CAS, Beijing, China): High mobility magnetic semiconductors based on pnictides
  • Lars Rebohle (HZDR, Germany): Flash lamp annealing for the crystallization of highly doped semiconductors
  • Jeff Warrender (U.S. Army ARDEC - Benet Labs, USA): tbd

List of scientific committee members:

  • Andriy Hikavyy, IMEC, Belgium
  • Manfred Helm, HZDR, Germany
  • Wladyslaw Walukievicz, Lawrence Berkeley National Lab, USA
  • Jianhua Zhao, Institute of Semiconductors, CAS, China
  • Andre Vantomme, KU-Leuven, Belgium

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Symposium organizers
Deren YANGZhejiang University

State Key Lab of Silicon Materials, Zheda Road 38, Hangzhou 310027, P. R. China

+86 571 87951667
mseyang@zju.edu.cn
Eric GARCIA HEMMEUniversidad Complutense de Madrid

Av. Complutense s/nº Facultad de C. Físicas, 28040 Madrid, Spain

+34 650805135
eric.garcia@ucm.es
Meng-Ju (Renee) SHERWesleyan University

265 Church St. Exley Rm 239, Middletown, CT, 06459, USA

+1 860 685 2033
msher@wesleyan.edu
Shengqiang ZHOUHelmholtz-Zentrum Dresden-Rossendorf

Bautzner Landstr. 400, 01328 Dresden, Germany

+49 351 2602484
s.zhou@hzdr.de