Materials for Electronics, Optoelectronics and Sensing
EWide and ultra-wide-bandgap semiconductors challenges: from materials to applications
Wide and Ultra-Wide Bandgap Semiconductors (W&UWBS) is an important class of materials that are used (or envisaged to be used) in a variety of applications, specifically related to the energy, communications and sensing applications. The present proposal, aims to establish the tradition for such topic at Fall EMRS Meetings, serving as an arena for communicating the newest results in this booming field.
Scope:
Wide and Ultra-wide Bandgap Semiconductors (W&UWBS) exhibit unique properties for their applications in power electronics, RF electronics, deep UV optoelectronics, extreme-environment applications, etc. There is a range of material systems belonging to the W&UWBS class. In the present symposium, we keep our focus on oxides (e.g. Ga2O3, ZnGa2O4, (ZnMg)O, (AlGa)2O3, GeO2 ect), nitrides (e.g. AlN, high-Al-content AlGaN, boron nitride, etc), and Carbon family including Diamond and Silicon Carbide (SiC). The goal is to cover the full chain of topics from material elaboration to device fabrication and performance, bringing together material researchers and device fabrication/simulation experts to share their knowledge, challenges encountered and solutions they proposed in these different fields. We think that the W&UWBS community would enthusiastically meet our initiative to create an arena in this field so urgently needed in Europe. The EMRS symposium is an excellent format for this purpose, as we already learned from the success of the various EMRS Meeting symposia proposed since 2015.
Hot topics to be covered by the symposium:
Symposium will cover most recent aspects of the corresponding material research as well as emerging device components.
We envisage contributions concerning materials:
- AlN and high-Al-content AlGaN; Ga2O3; Boron nitrides; Complex oxides (e.g. (ZnMg)O, (AlGa)2O3, GeO2 etc), Complex nitrides (II-IV-nitrides, II-II-nitrides, etc.), Diamond and SiC.
- Bulk crystal and thin film growth and characterizations
- Defects Studies: Theory/Experiment
- Functionalization of defects
- Optical, electrical, magnetic, and thermal properties
- Device fabrication and performance
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Dpto. Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica / Facultad de Ciencias, Campus Universitario Río San Pedro s/n, 11510 Puerto Real (Cádiz)
daniel.araujo@uca.esA. Lotników 32/46, 02-668 Warszawa, Poland
teiss@ifpan.edu.plMax-Born-Str. 2, 12489 Berlin, Germany
matthias.bickermann@ikz-berlin.deRue Bernard Grégory, 06560 Valbonne, France
yc@crhea.cnrs.fr