Functional Materials
KFerroelectric materials and devices for next-generation computing
This symposium explores the rapidly growing role of ferroelectric materials—hafnia-based and beyond—in enabling next-generation devices. Topics span memory, neuromorphic, and edge AI applications, bridging materials science and device physics and integration.
Scope:
Ferroelectric materials are emerging as key enablers for the next generation of energy-efficient electronic devices and computing paradigms. Among them, hafnium oxide–based ferroelectrics (HfO₂, HZO and related doped compounds) have attracted particular attention thanks to their scalability, CMOS compatibility, and robust polarization behavior in ultrathin films. Building on initiatives such as the Ferro4EdgeAI European project, this symposium will address recent advances in the materials science, processing, and characterization of hafnium-based ferroelectrics and related systems and the expanding role of ferroelectric materials across a broad spectrum of device technologies and applications.
The scope spans from fundamental mechanisms of ferroelectricity and wake-up effects, through dopant and interface engineering, defect control, and reliability, to integration strategies for device fabrication enabling new electronic functionalities (including ferroelectric field-effect transistors (FeFETs), ferroelectric tunnel junctions (FTJs), and BEoL-integrated structures).
Contributions are invited on thin-film growth and deposition techniques, domain dynamics, in-situ and multimodal characterization, theoretical modeling, and simulation of polarization switching. Special emphasis will be given to their application in low-power edge artificial intelligence, but the symposium will also cover cross-cutting opportunities such as brain-inspired computing, hardware security primitives, steep-slope logic, and multifunctional sensor/actuator systems.
By bringing together experts in materials and devices, the symposium aims to foster interdisciplinary dialogue on how ferroelectric materials can bridge the gap between fundamental research and practical applications. The ultimate goal is to highlight the transformative potential of ferroelectrics in future electronics.
Hot topics to be covered by the symposium:
- Materials design and processing of hafnium oxide–based ferroelectrics and related systems (perovskites, layered oxides, 2D ferroelectrics).
- Polarization mechanisms and domain dynamics in nanoscale ferroelectric films.
- Reliability and stability: endurance, retention, imprint, and fatigue.
- Interface engineering and integration in CMOS and BEoL-compatible architectures.
- Advanced characterization and modeling of structure–property relationships.
- Ferroelectric-based devices and emerging functionalities (memories, logic, and analog computing elements).
- Materials challenges for applications
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DRF/IRAMIS/SPEC, Bâtiment 462, 91191 Gif sur Yvette, France
nick.barrett@cea.frNöthnitzer Str. 64 a, 01187 Dresden, Germany
ruben.alcala@namlab.com1 rue de Fermi Campus Lyon Tech-la Doua, 69621 Villeurbanne cedex, France
sara.gonzalez@insa-lyon.fr