Wide and ultra-wide-bandgap semiconductors challenges: from materials to applications

Wide and Ultra-Wide Bandgap Semiconductors (W&UWBS) is an important class of materials that are used (or envisaged to be used) in a variety of applications, specifically related to the energy, communications and sensing applications. The present proposal, aims to establish the tradition for such topic at Fall EMRS Meetings, serving as an arena for communicating the newest results in this booming field.

Scope:

Wide and Ultra-wide Bandgap Semiconductors (W&UWBS) exhibit unique properties for their applications in power electronics, RF electronics, deep UV optoelectronics, extreme-environment applications, etc. There is a range of material systems belonging to the W&UWBS class. In the present symposium, we keep our focus on oxides (e.g. Ga₂O₃, ZnGa₂O₄, (ZnMg)O, (AlGa)₂O₃, GeO₂ ect), nitrides (e.g. AlN, high-Al-content AlGaN, boron nitride, etc), and Carbon family including Diamond and Silicon Carbide (SiC). The goal is to cover the full chain of topics from material elaboration to device fabrication and performance, bringing together material researchers and device fabrication/simulation experts to share their knowledge, challenges encountered and solutions they proposed in these different fields. We think that the W&UWBS community would enthusiastically meet our initiative to create an arena in this field so urgently needed in Europe. The EMRS symposium is an excellent format for this purpose, as we already learned from the success of the various EMRS Meeting symposia proposed since 2015.

Hot topics to be covered by the symposium:

AlN and high-Al-content AlGaN; Ga2O3; Boron nitrides; Complex oxides (e.g. (ZnMg)O, (AlGa)2O3, GeO2 etc), Complex nitrides (II-IV-nitrides, II-II-nitrides, etc.), Diamond.

• Bulk crystal and thin film growth and characterizations
• Defects Studies: Theory/Experiment
• Functionalization of defects
• Optical, electrical, magnetic, and thermal properties
• Device fabrication and performance

Scientific committee :

• Daniel Alquier (GREMAN, Univ. Tours, France)
• Julien Brault (Univ Côte d’Azur, CNRS, CRHEA, Valbonne, France)
• Ramon Collazo (North Carolina State Univ, Raleigh, USA)
• Philippe Ferrandis (Inst. Neel, Univ. Grenoble, France)
• Debdeep Jena (Cornell Univ., Ithaca, USA)
• Anna Kafar (Unipress, Warsaw, Poland)
• Peter Knittel (Fraunhofer IAF, Freiburg, Germany)
• Yoshinao Kumagai (Tokyo University, Japan)
• Mihai Lazar (Univ. Technology Troie, France)
• Marie-Amandine Pinault-Thaury (Univ. Versailles, France)
• Jan Suffczynski (Univ Warsaw, Poland)
• Filip Tuomisto (University of Helsinki, Finland)
• Tim Wernicke (Technical Univ. Berlin, Berlin, Germany)

Invited speakers :

• Saud Bin Anooz, IKZ, Berlin, Germany, “MOVPE Growth and Characterization of (AlxGa1−x)2O3 for High-Power Device Applications”
• Connor Carr, Crystal IS Inc., Green Island, NY, USA, “Growth and Evaluation of 100 mm Aluminum Nitride Crystals”
• Srabanti Chowdhury, Stanford University, Stanford, CA, USA, “GaN with Diamond integration”
• Satoshi Koizumi, NIMS Tsukuba, Japan, “n and p-doping of diamond”
• Christoph Margenfeld, Braunschweig Univ, Germany, "Aluminum Nitride: the Ultimate Semiconductor for Power Devices?“
• Farid Medjdoub, IEMN, Univ. Lille, France, “III-Nitride based vertical devices on Silicon”
• Eva Monroy / Ettore Coccato, CEA Grenoble, France ‘’AlGaN/AlN based Cathodoluminescent UVC Emitters’’
• David Moran, University of Glasgow, Scotland, UK, "Research and development of transfer-doped diamond for electronic devices“
• Julien Pernot, CNRS Grenoble, France, “Diamond electronic devices”
• David Rogers, Nanovation, Châteaufort, France, “Gallium Oxide Based X-Ray Detectors”
• Toshinori Taishi, Shinshu University, Matsumoto, Japan, “β-Ga2O3 crystal growth by the Vertical Bridgman technique”
• Kornelius Tetzner, Ferdinand Braun Institut, Berlin, Germany, "Gallium Oxide device concepts and applications"
• Aleksandra Wójcicka, Łukasiewicz Institute of Microelectronics and Photonics, Warsaw, Poland, “Oxide based Schottky and heterojunction diodes on β Ga₂O₃”