Functional Materials
JEmerging nitride materials with novel combinations of functional properties – fundamental properties, crystallization, and prospective applications
Recent discoveries, such as ferroelectricity in nitrides in 2019, led to a renewed vibrant interest in novel nitride semiconductors as well as their heterostructures with III-N. Important examples are III-MeN (Me = elements enhancing piezoelectricity or introducing ferroelectricity) and II-IV-N2.
Scope:
Novel nitride semiconductors provide an extraordinarily wide range of fascinating novel physical properties, e.g. piezo-electric, ferro-electric, magnetic, superconducting. They disruptively extend the spectrum of functional properties beyond that of the more established III-nitrides alone, making nitrides the class of semiconductors with the most diverse functional properties known to date. These novel nitrides are currently in early stages of basic research, and a variety of further novel nitrides is on the horizon. In contrast, some binary and ternary nitrides (III-N, III=In,Ga,Al), are already used commercially in electronic devices. Research into novel nitrides and their integration with (Al,Ga,In)N offers a much larger design space not only for electronic and optoelectronic but also for photonic devices, acoustic devices, memory devices, and prospectively entirely new types of devices. At the same time, the existing III-N technology strongly facilitates the integration of these novel materials from a technological viewpoint. There is a large need for fundamental investigations on these emerging nitrides as well as their interfaces with more established III-N materials. Phase transitions are also important, as a phase transition from wurtzite to cubic structures often determines the maximum Me content, and larger Me contents need to be realized to unlock the full potential of III-MeN. The role of cation ordering is also a current topic, as it can decide about lattice structures in II-IV-N2. For most materials, the bulk properties are insufficiently understood due to a lack of bulk crystals with sufficient quality and size for fundamental characterization. Conductivity control is another important aspect, as well as epitaxial growth of the new nitrides. Lastly, device concepts utilizing heterostructures of III-N, III-MeN and II-IV-N2 are at a very early stage of research, and further materials such as NbN broaden possibilities.
Hot topics to be covered by the symposium:
- Ferroelectric and piezoelectric nitrides
- Phase transition and conductivity control in III-MeN (Me=Sc, Y, B, etc.) and II-IV-N₂ (e.g. ZnGeN2)
- Cation order and disorder
- Epitaxial growth of emerging nitride semiconductors
- Interfaces of novel nitrides and III-N
- Bulk properties and defects
- Heterostructures of III-N (GaN, AlN, InGaN etc.), III-MeN and/or II-IV-N₂
- Novel device concepts for enhanced performance and novel functionalities
- Development of sustainable nitride semiconductors featuring earth-abundant elements
- Crystal growth and properties of hBN and its polytypes
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