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Doping at the nanoscale: new challenges and advanced applications

Conventional doping technologies face novel challenges due to the introduction of low dimensional materials and ultra-scaled devices. The symposium will bring together scientists working on advanced strategies for the doping of bulk and nanostructured semiconductors to tailor material properties at nanoscale.


Semiconductors constitute the building blocks of current microelectronic, optoelectronic and photovoltaic industries. The success of semiconductors is based on the ability to control their physical properties by means of doping, i.e. the introduction of substitutional impurities and defects in the crystal lattice. Ion implantation followed by a high temperature thermal treatment is commonly used to precisely modulate the distribution of active dopants into the crystal lattice and to achieve an effective semiconductor doping, recovering the implantation induced damage. Alternatively, diffusion from solid or liquid sources represents a gentle doping technique, since no damage of the lattice is generated during the processing of the substrates, but offers limited control of the dopant concentration profile. The introduction of low dimensional semiconductor materials and the progressive scaling of semiconductor devices pose new challenges related to deterministic control of dopant impurities that could ultimately result in the opportunity to fabricate novel devices like single atom transistors for quantum computing or single photon emitters. At the other doping extreme the introduction of foreign elements well above their solid solubilities (hyperdoping) is mandatory for advanced applications in nanoelectronics and photonics. Furthermore, networks of randomly distributed dopants have been proposed as a system for novel neuromorphic computing devices.

In this respect, there is a renewed interest in the semiconductor community  for alternative and advanced methodologies to control doping at the nanoscale. The symposium aims to address these new challenges faced by the semiconductor community bringing together scientists working on experimental and theoretical problems related to doping of semiconductors. The symposium is conceived as a multidisciplinary platform that gathers researchers coming from academia and industry and promotes interactions among scientists and engineers working on all the aspects of semiconductor doping, ranging from fundamental physics and material science to the technological implementation and the final application in functional devices.

Hot topics to be covered by the symposium:

  • Fundamental aspects of doping and applications in nanoelectronics, (thermo)photovoltaics, photonics and quantum computing.
  • Deterministic doping. Defect and dopant-defect engineering.
  • Alternative doping strategies: monolayer doping, epitaxial doping, single ion implantation, STM lithography
  • Electrical and optical Hyperdoping.
  • Out of equilibrium processes: laser annealing, flash lamp annealing, RF annealing, phase transitions (s/s and l/s), (single) ion implantation, plasma immersion ion implantation.
  • Substitutional and proximity doping, defect engineering of 2D semiconductors:
  • Simulations of materials, processes, electrical and optical properties related to doping.
  • Doping of bulk and nanostructured semiconductors: Si, Ge, diamond, group IV alloys, III-V and II-VI compounds and alloys, 2D semiconductors.
  • Characterization techniques and issues related to doping: 3D, structural, chemical, electrical and optical, single atoms, defects, phase separations, layered materials.

List of confirmed invited speakers:

  • Yaping Dan - (Shanghai University) “Atomically Thin Delta Doping by Flash Lamp Annealing
  • Luca Camilli - (University of Roma Tor Vergata) “Doping of 2D Materials
  • Joaquín Fernández Rossier - (INL) “Simulation of 2D Semiconductors
  • Michele Laus - (University of Eastern Piedmont) “Doping of Semiconductors by Polymers Terminated with a Dopant Containing Moieties
  • Roger Webb - (University of Surrey) “The Application of Ion Beams for Solid State Quantum Technologies
  • Paul Stradins - (NREL) “Doping Solutions for Advanced Si Photovoltaics
  • Ray Duffy - (Tyndall National Institute) “3D to 2D, Traditional and New Doping Challenges at the Nanoscale
  • Naoto Horiguchi - (IMEC) “Doping Issues for Nanoelectronics and Ultrascaled Devices
  • Lorenzo Rigutti - (Rouen University) “3D Dopant Profiling by Atom Probe Tomography
  • Jose Menendez - (Arizona State University) “Properties of in-situ Doped Ge an GeSn Films with Ultra-High Carrier Concentrations
  • Kai Nordlund - (University of Helsinki) “Molecular Dynamics of Ion Implantation in Wide Bandgap Semiconductors
  • Antonino La Magna - (CNR-IMM) “Atomistic Simulation of Ultra-Fast Annealing Processes


All the attendees are invited to submit a paper to the special issue about "Doping at the nanoscale: new challenges and advanced applications" that will be published in the Journal Materials Science in Semiconductor Processing (Elsevier).

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Symposium organizers
Andrea CAPASSOInternational Iberian Nanotechnology Laboratory (INL)

Avda. Mestre José Veiga 4715-330, Braga, Portugal

+351 253140112
Enrico NAPOLITANIDipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM

Via Marzolo 8, I-35131 Padova, Italy

+ 39 0498277001
+ 39 0498277003
Jeffrey MCCALLUMThe University of Melbourne

School of Physics, Melbourne, Victoria, 3020 Australia

+61 3 8344 8072
Michele PEREGO (Main organizer)CNR-IMM, Unit of Agrate Brianza

Via Camillo Olivetti 2, 20864 Agrate Brianza, Italy

+39 039 603 6383