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Innovative and advanced epitaxy

The symposium, co-organized with the EU COST action CA20116 OPERA ( takes an interdisciplinary and cross-community approach to key problems in epitaxy, including breakthroughs in challenging materials systems, new experimental and theoretical methods for the maturation of epitaxial materials, and novel functionalities for next-generation devices.


Today, material innovation is more vital than ever and needs to be not only more efficient and design-driven but also environment friendly as well as energy- and resource saving. The European epitaxy community is now at a turning point. Global challenges such as sustainability, information security, Smart Cities and the Internet of Things demand new technologies which can be enabled by advanced epitaxial materials. However, there are significant roadblocks to continued innovation in epitaxial materials, and these barriers are common across the wide range of maturity of the different materials classes:

  • a deep understanding of the basic processes allowing control of their synthesis and properties;
  • the development of hybrid material systems integrating multiple functionalities;
  • the material engineering to target specific properties in relation with identified applications;
  • the conversion of the scientific excellence into innovative solutions to establish disruptive technologies.

These topics, common to a large variety of epitaxial materials, whatever their form and synthesis techniques, constitute the essential prerequisites for their successful deployment into applications. In relationship with the EU COST Action OPERA, the symposium aims at bringing together scientists working in the field of epitaxy and push the merger of researchers 1) from traditionally separated scientific communities but having complementary knowledge and common interest, and 2) from academia and industry. It focuses therefore on innovative and advanced epitaxy, with the main objective to share ground-breaking theoretical or experimental researches on epitaxial materials, properties and devices, whatever the materials (III-V, III-N, group-IV, functional oxides, 2D-materials, novel metal or semi-metal compounds, dielectrics), their dimension (bulk, 2D-layer, 3D-shape, structured at micro- or nano-scales) and their growth technique (MBE, (MO)CVD, ALD, LPE, PLD...). New epitaxial combinations of materials will be highlighted, then opening the way towards next generation multi-functional devices. Thus, the symposium will be organized around the following research axes:

  1. Growth processes: surfaces, interfaces, wetting, kinetics, thermodynamics.
  2. Structure, stress and defects in epitaxial materials.
  3. Epitaxy of low-dimensional materials: substrate/epilayer interactions, nanostructures.
  4. Physical properties of epitaxial materials, relationships between structure, materials chemistry and targeted physical properties (e.g. optical, transport, ferroic and piezo properties, thermoelectricity, solar harvesting).
  5. Applications-oriented epitaxy: device architecture, doping, localized epitaxy.
  6. Advanced epitaxial materials for technological transfers in photonics, electronics, energy, communication / information, health, and environment; assessment of materials requirements.

Hot topics to be covered by the symposium:

  • Epitaxy of new materials: 2D-materials going beyond graphene, new alloys and compounds, oxides and free-standing oxide membranes, semi-metals and topological materials compatible with Si-based technology;
  • Epitaxy of new functional materials: hyperbolic materials, high Χ2 non linear materials, dielectric constant engineered materials, high-mobility materials, 2D/0D quantum-confined systems ...
  • Epitaxy of hybrid systems, combining materials with different properties: III-V/Si, oxides/Si or III-V, 2D/III-V or Si, III-V/metals or semimetals and oxide heterostructures;
  • New approaches of epitaxy in theory and experiment;
  • Epitaxy of innovative monolithic devices


Proceedings of the symposium will be published in thin solid films. A specific communication will be addressed to symposium attendees.

COST support:

The COST action OPERA may financially support the participation to the conference, especially for young researchers originating from target countries (ITC countries are Albania, Bosnia and Herzegovina, Bulgaria, Cyprus, Czech Republic, Estonia, Croatia, Georgia, Greece, Hungary, Lithuania, Latvia, Malta, Moldova, Montenegro, Poland, Portugal, Romania, Slovenia, Slovakia, Republic of North Macedonia, Republic of Serbia, Turkey and Ukraine). For more information about funding requests, please visit:

The OPERA COST Action aims to foster interdisciplinary collaborative research activities between the scientific communities and the industrial partners allowing maintaining European epitaxy at the topmost worldwide level of research and innovation, by disseminating new synthesis and characterization techniques, both for new/optimized nano- microscale growth tools, and new/optimized characterization tools. The action also aims at involving women scientists to highlight their career and favor their access to senior academic positions.

Confirmed invited speakers:

  • I. Berbezier (IM2NP, France)
  • F. Glas (C2N, France), “Modeling nucleation and growth statistics in semiconductor nanowires, based on in situ experiments”
  • A. Sanchez (University of Warwick, UK)
  • D. Babonneau (Institut P’, France), “Growth of self-aligned dichroic plasmonic nanostructures on amorphous surfaces”
  • M. Sawicka (Institute of high pressure Physics, Poland), “Electrochemical etching for blue laser diodes with nanoporous GaN cladding”
  • V. Zannier (Istituto Nanoscienze, Italy), “Free-standing InSb nanostructures: growth, morphology control and electrical characterization”
  • M. Jamet (CEA Grenoble, France), “Van der Waals epitaxy of two-dimensional transition metal dichalcogenides”
  • J. M. Lopes (PDI Berlin, Germany)
  • T. S. Jespersen (DTU, Denmark)
  • B. Daudin (CEA Grenoble, France), “AlN/GaN nanowire heterostructures for UV-C light emitting devices”
  • V. Marinova (IOMT-BAS, Bulgaria), “Graphene and 2D transition metal selenides: synthesis and characterizations”
  • E. Mensur Alkoy (Gebze Technical University, Turkey), “How Can the Electrocaloric Response in Ferroelectrics be Enhanced? Through Crystallographic Texture, or Point Defects, or Phase Coexistence?”

Scientific committee:

  • Marco Salvalaglio, TU Dresden (Germany)
  • Bogdan Ranguelov, Institute of Physical Chemistry, Laboratory of Electron Microscopy and Microanalysis (Bulgaria)
  • Marie-Ingrid Richard, ESRF (France)
  • Pierre Müller, CINaM (France)
  • Athanasios Dimoulas, NCSR-DEMOKRITOS, University of Athens (Greece)
  • Clément Merckling, IMEC, KU Leuven (Belgium)
  • Rafaella Calarco, CNR-IMM unit Rome (Italy)
  • Susana Cardoso Freitas, INESC, Lisboa (Portugal)
  • Peter Krogstrup, Niels Bohr Institute, Microsoft, Copenhagen, (Danemark)
  • Gertjan Koster, University of Twente, Enschede, (The Netherlands)

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Symposium organizers
Achim TRAMPERTPaul-Drude-Institut für Festkörperelektronik

Hausvogteiplatz 5–7, 10117 Berlin, Germany

+49 30 20377 280
Charles CORNETFOTON laboratory – INSA Rennes

INSA Rennes, 20, Avenue des Buttes de Coësmes, CS 70839, F-35708 Rennes Cedex 7, France

+33 (0)2 23 23 83 99
Frédéric LEROYAix-Marseille Université

CINaM - Campus de Luminy - Case 913 - 13288 Marseille Cedex 9, France

+33 (0)660362824
Gavin BELLUniversity of Warwick

Department of Physics, Coventry CV4 7AL, UK

+44 24 7652 3489