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Wide-band-gap semiconductors

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New frontiers in wide-band-gap semiconductors and heterostructures for electronics, optoelectronics and sensing

Given the success of the E-MRS Fall 2018 Symposium R “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing” (more than 100 participants), we want to propose a second edition, aimed to provide an update on the evolution of this highly dynamic and technologically relevant research field in the last years.

Wide bandgap (WBG) semiconductors (such as SiC, GaN) are currently the materials of choice for high power and high frequency electronics. Furthermore, alternative wide bandgap semiconductors (Ga2O3, AlN, h-BN, diamond,..) and the heterostructures of SiC and GaN with 2D materials (graphene, MoS2) are gaining more and more interest for novel applications.

Scope:

In the last 20 years, WBG semiconductors, in particular SiC and group III-Nitrides, experienced tremendous improvements in terms of materials quality, and are now employed in a variety of devices for high power/high frequency electronics, optoelectronics and sensing. From the materials side, the 4H-SiC polytype reached the highest quality and large area substrates (150 mm diameter) are nowadays available for industrial applications, whereas 200 mm wafers are under development. On the other hand, the research on cubic polytype (3C) is still in progress, with the aim of improving the heteroepitaxy on Silicon substrate and the bulk growth. To date, GaN based optoelectronic devices (LED, lasers) and high-electron-mobility transistors (HEMTs) have been almost exclusively developed from heteroepitaxial materials on large diameter foreign substrates (sapphire, SiC, Si), eventually followed by layer transfer process. More recently, high quality bulk GaN and AlN substrates start to be available for research and devices. Notwithstanding these progresses on materials quality, several issues still remain to be addressed to exploit the full potential of SiC and GaN. Relevant issues for SiC power devices are the reduction of interface traps density at SiO2/4H-SiC interfaces limiting the carrier mobility MOSFETs, activation of implanted dopants, contacts optimization on n- and p-type doped layers, the reliability of MOS interfaces. On the other hand, the development approaches for normally-off HEMTs, gate dielectrics technology and thermal management are critical issues for GaN power devices.

Besides SiC and GaN, alternative WBG semiconductors, such as Ga2O3, AlN, and diamond, are currently the object of increasing interest. Furthermore, WBG nanostructures (e.g. nanowires, nanorods,..) and novel 2D/3D heterojunctions formed by the integration of 2D materials (such as graphene, MoS2 and h-BN) with SiC and GaN are under consideration for novel devices applications (ultra-high frequency transistors, UV photodetectors,..).

The symposium will serve as a forum for experts from academia and industry to discuss the critical issues in the state-of-the-art SiC and GaN technologies, and wide space will be given to new frontiers in WBG materials and devices. Furthermore, the chairs and some scientific committee members are involved in several running EU and National projects, and bilateral agreements, on WBG semiconductors and novel materials (GaN4AP, Reaction, ETMOS, EleGaNTe, ETNA, GHOST, ...). Hence, the symposium will represent an excellent dissemination opportunity for these projects and will certainly attract many contributions from the partners.

Hot topics to be covered by the symposium:

  • SiC homo- and hetero-epitaxy
  • SiC processing and devices (MOS interfaces, contacts, doping by ion implantation, MOSFET reliability...)
  • III-N heteroepitaxy (nucleation layers, defects, interfaces control,...)
  • Bulk GaN: growth and vertical devices processing (Schottky, MOSFET, CAVET...)
  • GaN HEMTs technology for RF and power electronics (contacts, dielectrics, approaches to normally off transistors, ...)
  • Other emerging WBG semiconductors (Ga2O3, AlN, diamond)
  • Thermal management in GaN and oxide devices
  • III-Nitrides for optoelectronics and photovoltaics
  • WBG materials for sensors, MEMS and NEMS
  • 2D materials (graphene, MoS2, h-BN) and their integration with SiC or Nitride semiconductors
  • Advanced characterizations (SPM, TEM, optical, electrical,...) of WBG materials and heterostructures

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Symposium organizers
Bela PECZInstitute for Technical Physics and Materials Science

Centre for Energy Research, Hungarian Academy of Sciences (HAS-MTA), 1121 Budapest, Konkoly Thege 29-33, Hungary

pecz.bela@energia.mta.hu
Matteo MENEGHINIUniversity of Padova

epartment of Engineering and Information - Via Gradenigo 6/b - 35131 Padova, Italy

menego@dei.unipd.it
Patrick FIORENZAConsiglio Nazionale delle Ricerche – Institute for Microelectronics and Microsystems (CNR-IMM)

Strada VIII, 5, 95121, Catania, Italy

patrick.fiorenza@imm.cnr.it
Yvon CORDIERCRHEA-CNRS

Rue Bernard Grégory 06560 Valbonne France

+33 4 93 95 78 20
Yvon.Cordier@crhea.cnrs.fr