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Wide-band-gap semiconductors


Ultra wide-band-gap semiconductors for energy and electronics (UWBG2E)

Ultra-wide Bandgap Semiconductors (UWBG) is an important class of materials that are used (or envisaged to be used) in variety of applications, specifically related to the energy and electronics sectors. The present symposium, which we wish to make to a bi-annual EMRS event, will serve as a platform for communicating newest results in this booming field.


Ultra-wide Bandgap Semiconductors (UWBGs) exhibit unique properties for their applications in power electronics, RF electronics, deep UV optoelectronics, quantum information, extreme-environment applications, etc. Among broad varieties of the UWBGs, nitrides (e.g. AlN, high-Al-content AlGaN, boron nitride), oxides (e.g. Ga2O3, ZnMgO) and diamond have attracted tremendous research attention. The present symposium will focus on these materials to cover a range of directions of growing interest for the UWBG research community. Specifically, material synthesis, defects, doping issues, electrical/optical properties as well as corresponding device design, fabrication and performance are all in the scope of the present symposium. Importantly, bulk crystals, thin films, heterojunctions and low-dimensional materials/components are of interest. Moreover, there are emerging materials gradually coming to the field and these materials will to be in the scope of the symposium too. Notably, even though the aspects belonging to the UWBGs used to be covered at a number of specialized conferences on different specific materials, we think that the research and industrial communities would enthusiastically meet establishing a more generic UWBGs event, specifically in Europe. We think that the EMRS symposium is an excellent format for this purpose.

Hot topics to be covered by the symposium:

Ultra-wide Bandgap Semiconductors Symposium will cover most recent aspects of the corresponding material research as well as emerging device components. We envisage contributions concerning materials:

  • Diamond; AlN and high-Al-content AlGaN; Ga2O3; Boron nitrides; Complex oxides (e.g. ZnGa2O4, MgZnO, etc), Complex nitrides (II-IV-nitrides, II-II-nitrides, etc.)
  • Bulk crystal and thin film growth
  • Defects Studies: Theory/Experiment
  • Functionalization of defects
  • Optical, electrical, magnetic, and thermal properties
  • Device fabrication and performance

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Symposium organizers
Ekaterine CHIKOIDZEUniveristé Paris Saclay, CNRS

45 Av. des Etats Unis, Versailles, France
Henryk TEISSEYREInstitute of Physics, Polish Academy of Sciences

Al. Lotnikow 32/46 02-668 Warsaw, Poland
Motoaki IWAYAMeijo University

1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Sergey A. TARELKINTechnological Institute for Superhard and Novel Carbon Materials

7a, Centralnaya str., Troitsk, Moscow, 108840 Russia