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SEMICONDUCTORS AND ELECTRONIC MATERIALS

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Diamond for electronic devices III

Diamond grown by Chemical Vapour Deposition (CVD) or other laboratory methods is rapidly emerging as an important material for new device applications required for the 21st century. Further, large area, high purity diamond substrates have emerged over the past few years, making commercial development of devices a realistic prospect. Many applications are envisaged; in the fields of power electronics, room temperature quantum computing, bio-sensing, bio-interfaces, MEMS-NEMS and high energy radiation and particle detectors to name but a few. It has superior properties for next generation semiconductor applications such as the highest electron and hole mobilities, highest electric field breakdown strength, and a low dielectric constant. In combination with its unmatched thermal conductivity and radiation hardness many applications have been approached meanwhile, and which is at the core of this symposium.  The field is rapidly evolving and it is timely to follow the successful symposia held in 2016 and 2017 with an update on progress in the field at the E-MRS Fall meeting 2018.

Scope:

Several topics will be of particular interest at this meeting, although papers on all aspects of diamond technology are welcome. These include diamond for power electronics, diamond nano-electronic devices, diamond for quantum applications and diamond for bio-devices. In all cases, man-made single crystalline diamond is used either as ultra-pure layer or semiconducting by boron and phosphorus doping. The growth and deposition of high quality diamond films will therefore be a subtopic at the symposium. Quantum metrology applications (for example, magnetrometry based on NV centres) is of key interest. Doping of diamond is a key topic using both boron and phosphorus. in case of phosphorus and boron doping. The symposium on “Diamond for Electronic Devices II” will include all major activities to realize high quality devices, following on from the very successful symposium at the Fall EMRS meeting in 2016.

Hot topics to be covered by the symposium:

  • Innovative approaches for large area synthetic diamond growth (epitaxy & heteroepitaxy)
  • Diamond devices for power electronics (Schottky diodes, pin, MOS, bipolar transistors).
  • Efficient diamond-based UV emitters and detectors and particle detectors.
  • Doping of diamond (ultra-low, transfer-doping, metallic doping) using hydrogen or metal oxides, phosphorus or boron
  • The realization of ultra-pure diamond substrates
  • Control-removal of surface damage on diamond substrates prior to device fabrication
  • Cellular-diamond interactions for machine-brain interface applications and neurodegenerative disease studies
  • Diamond for imaging and quantum computing – including fundamental studies of colour centres (NV, Ni8, Si, etc), potential quantum devices, and supporting architectures (waveguides, couplers, etc).
  • Diamond films and their functionalization for sensing, imaging and separations, and for SAW , MEMS/NEMS electrochemical and photonic devices.
  • Nanodiamond surface functionalization, nanodiamond chemical-biochemical sensors and nanodiamonds for biological applications

Provisional list of invited speakers

  • Hiroshi Kawarada, Waseda University, Tokyo, Japan
  • Etienne Gheeraert, Institut Neel, CNRS, GRENOBLE, France
  • Hiromitsu Kato, AIST, Tsukuba, Japan
  • Daniel Araujo, University of Cadiz, Spain
  • Fedor Jelezko, Univeristy of Ulm, Germany
  • Yasuo Koide, , NIRIM, Japan
  • Robert Nemanich, Arizona State University, USA
  • Christoph E. Nebel, Fraunhofer-Institute for Applied Solid State Physics (IAF) Germany

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Symposium organizers
Ádám GALIWigner Research Centre for Physics

Hungarian Academy of Sciences, Konkoly-Thege Miklós út 29-33, Budapest, 1121, Hungary

+36 1 392 2222/1913
agali@eik.bme.hu
Hitoshi UMEZAWAAdvanced Power Electronics Research Center

National Institute of Advanced Industrial Science and Technology (AIST), Midorigaoka 1-8-31, Ikeda, Osaka, 563-8577, Japan

hitoshi.umezawa@aist.go.jp
Philippe BERGONZOCEA

Saclay, 91191 Gif-sur-Yvette, France

Philippe.Bergonzo@cea.fr
Richard B. JACKMANUniversity College London (UCL)

London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, 17-19 Gordon Street, London, UK

+44 791 484 9269
r.jackman@ucl.ac.uk