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Spin-dependent phenomena in semiconductors, 2D materials and topological insulators

Following the successful edition of last year, the symposium will give again the opportunity to discuss about the latest research efforts and developments related to spin-dependent phenomena in semiconductors including 2D materials and their heterostructures as well as topological insulators. The main goal is to address many different research fields related to spintronics ranging from the study of spin dynamics in conventional semiconductors for quantum engineering and spintronic purposes to the development of new materials where strong spin-orbit interaction translates into newly emerging topics such as valleytronics and spin-momentum locking leading to complex spin textures.


Nowadays, the electron spin offers new opportunities as a new degree of freedom to process information by combining non-volatility and high-speed manipulation within a scalable solid-state framework. Ferromagnetic metals have already been integrated into microelectronic and spintronic devices such as magnetic field sensors or magnetic random access memories (MRAM). Semiconductors have also attracted great attention for their very specific and promising spin properties: very long spin coherence times allowing to envision the implementation of quantum spin manipulation with mature microelectronics technology, and long spin diffusion lengths for spin transport and manipulation in spintronic devices. Moreover, electrical control of the spin degree of freedom could enable the integration of logic and memory functions, thus mitigating power consumption and boosting the performances of next generation spin-based devices. Control of single spins and of the interactions between them is one of the preferred routes towards the realization of a scalable quantum computer in a solid-state system or spin-based electronic devices like spin-transistors. With this respect, a central goal of semiconductor spintronics is to understand and control the fundamental mechanisms governing coherent phenomena and spin transport. Eventually the ability to address and read optically the spin states is a key advantage of semiconductors, it will definitely lead to novel concepts for devices and electronic circuits.

Recently, a new frontier of exploration in the field of spintronics is offered by topologically protected surface and edge states in bulk and quantum wells of narrow-gap semiconductors and semimetals, respectively. The strong spin-momentum locking into edge or surface states of topological insulators might lead to dissipationless electrical transport and large current-induced surface spin accumulations enabling to switch the magnetic state of MRAMs by spin-orbit torques. Similarly, atomically-thin transition metal dichalcogenides introduce the new valley degree of freedom giving birth to a new field of research called valleytronics. This new topic will raise novel and intriguing phenomena such as the valley Hall effect, a consequence of the Berry curvature. Furthermore, due to their low-dimensional character, proximity effects are effective tools to tailor their electronic properties such as exchange coupling to control valley polarization.

The symposium will thus provide the opportunity to gather insights into theoretical and experimental advances in spin-dependent phenomena and will cover progress in the development of spintronic materials, with a special focus on semiconductors, 2D and topological materials. The aim is to foster a discussion about emerging systems and stimulate future research directions heading to the horizon of solutions and know-how having immediate repercussions on societal concerns ranging from security to energy saving.

Hot topics to be covered by the symposium:

Spin-dependent phenomena in Semiconductors

  • Spin injection and detection
  • Spin Confinement effects
  • Spin-dependent transport in 2D electron and hole gases
  • Spin helix states
  • Charge-spin interconversion by spin-orbit coupling effects
  • Spin-optoelectronics

Two dimensional materials

  • Growth of atomically thin semiconductors and their heterostructures
  • Ferromagnetic contact engineering
  • Spin transport
  • Van der Waals heterojunctions and proximity effects
  • Spin dynamics and scattering processes
  • Valleytronics

Topological insulators

  • New 3D and 2D topological insulators
  • Electron spectroscopies of topological insulators
  • Quantum spin Hall effect
  • Weyl and Majorana fermions
  • Spin-orbitronics
  • Topological quantum computing

Scientific Committee:

  • A. Balocchi, INSA Toulouse (France)
  • J. Cibert, Institut NÉEL (France)
  • H. Dery, University of Rochester (USA)
  • T. Dietl, International Research Centre MagTop (Poland)
  • J. Fabian, Universität Regensburg (Germany)
  • W. Han, Beijing University (China)
  • G. Isella, Politecnico di Milano (Italy)
  • M. Kohda, Tohoku University (Japan)
  • G. Salis, IBM (Switzerland)
  • D. Weiss, Universität Regensburg (Germany)
  • L. Yang, University of Toronto (Canada)
  • H. Jaffrès, UMPhy CNRS-THALES (France)

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Symposium organizers
Aurelie SPIESSERNational Institute of Advanced Industrial Science and Technology

1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Fabio PEZZOLIUniversità di Milano-Bicocca

via R. Cozzi 55, 20125 Milano - Italy

+39 02 6448 5157
Matthieu JAMETINAC/Spintec and University Grenoble Alpes

17 rue des Martyrs, 38054 Grenoble cedex 9 - France

+33 4 38 78 22 62
Piotr KOSSACKIUniversity of Warsaw

Faculty of Physics, ul. Pasteura 5, Warsaw 02-093, Poland