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New atomic layer deposition approaches towards functional materials and devices

ALD is a chemical deposition technique traditionally used in the field of microelectronics and large area displays. In recent years ALD has seen a huge evolution in terms of the materials that can be deposited, the reactors and the applications. This symposium aims at highlighting recent developments in the field of ALD of functional materials and devices and to present the ALD community to the broader materials science community.


ALD is a Chemical Vapour Deposition technique that is surface-limited and self-terminating. As a result, film thickness can be controlled very precisely to the nanometer, high aspect ratio features can be coated with a unique level of conformality, and, film homogeneity is unrivalled. ALD, with its unique characteristics, was developed in the 1970s to meet demands in the fields of microelectronics and large area displays, and these have remained its main applications, both at the lab and industrial scale, for many years. In terms of materials, metal oxides and in particular a handful of them (HfO2, Al2O3, TiO2, ZnO and Ta2O5) where the sole object of ALD research. With the advent of nanotechnology, ALD has gained momentum due to the need of controlling and engineering surfaces and interfaces. As a result, the number of laboratories equipped with an ALD system has increased significantly, which has resulted in an exponential increase in the number of publications involving ALD.

ALD is nowadays a much bigger field than originally in which in addition to the classical oxides cited above, other oxides such as copper, nickel of iron oxides are being developed.  ALD researchers are even tackling the deposition of complex mixed and doped oxides. This translates in new reaction chemistries being developed, including new precursors, and novel applications being targeted. A further development is the deposition of metallic coatings, and of hybrid and organic thin films thanks to the organic variation of ALD, namely, Molecular Layer Deposition (MLD). This again paves the way for new materials and applications. In addition, ALD researchers have devoted efforts to developing systems capable of depositing at higher throughput than with conventional ALD, thus making the technique more appealing for industrial application outside its traditional fields of applications. Some of the last developments related to ALD include area-selective deposition, for which different approaches are being explored, solution ALD and Atomic Layer Etching. Finally, the advancement and understanding of ALD and its mechanisms is sustained by research efforts in advanced and in situ characterization studies, in combination with modelling and simulation. The first goal of this symposium is thus to present the evolution of ALD from its original materials and fields of applications, which now include photovoltaics, energy storage, photo-splitting, catalysis, barrier layers and biomedical applications, among other.

The second objective is to bring together the ALD research and community in a dedicated symposium, as opposed to being diluted among many symposia depending of the materials, application, etc., as is currently the case in past E-MRS meetings. This symposium is meant to be the forum in which the ALD community will present the recent developments in ALD to the wider materials community. We expect it to foster many new collaborations that will lead to new materials, applications and chemistries being developed.

Hot topics to be covered by the symposium:

Papers are solicited on (but not limited to) the following topics:

  • Area-Selective ALD
  • Spatial ALD and atmospheric processing, high throughput
  • New reaction mechanisms, precursors and applications
  • Deposition of Hybrid/Organic materials by MLD
  • Modelling of reaction mechanism
  • Barrier layers, protective coatings
  • Energy applications (batteries, supercapacitors, solar cells, photo-splitting)
  • Advanced characterization
  • Energy activated ALD
  • Deposition of 2D materials, sulphides
  • ALD for MEMS
  • Solution ALD
  • Atomic Layer Etching (ALE)

Confirmed invited speakers

  • Thomas Riedl (Universität Wuppertal, Germany)
  • Angel Yanguas-Gil (Argone National Laboratory, USA)
  • Jullien Bachmann (Friedrich Alexander University, Germany)
  • Erwin Kessels (Technical University Eindhoven, The Netherlands)
  • Ruud van Ommen (Delft University of Technology, The Netherlands)
  • Riikka Puurunen (Aalto University, Finland)
  • Christoph Vallée (Laboratoire des technologies de la Microélectronique, France)
  • Elsje Alessandra Quadrelli (Laboratory of chemistry, catalysis, polymers & processes, Villeurbanne, France)
  • Maarit Karppinen (Alto University, Finland)
  • Marek Godlewski (Institute of Physics, Polish Academy of Sciences, Poland)
  • Olaf Nilsen (Department of Chemistry, UiO, Olso, Norway)
  • Anjana Devi (Ruhr-Universität Bochum)

Confirmed members of the scientific committee

  • Elisabeth Blanquet, SIMAP-University Grenoble Alps/CNRS, France
  • Nathanaelle Schneider, CNRS-IPVF, France
  • Alexey Y. Kovalgin, UOTwente, Netherlands
  • Anjana Devi, Ruhr-Universität Bochum, Germany

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Symposium organizers
Christoph HOSSBACHPicosun Europe GmbH

World Trade Center – Freiberger Str. 39 01187 Dresden, Germany
David MUÑOZ-ROJASLaboratoire des Matériaux et du Génie Physique (Grenoble INP/ CNRS)

3 Parvis Louis Néel, 38016, Grenoble, France
Maria BERDOVAUniversity of Twente

Dienstweg 1, 7522 ND Enschede, The Netherlands
Seán T. BARRY Carleton University

203 Steacie Building, 1125 Colonel By Drive, Ottawa, Ontario, K1S 5B6, Canada