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New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing

Wide bandgap (WBG) semiconductors (such as SiC and GaN) are currently materials of choice for high power and high frequency electronics. Furthermore, alternative WBG materials (including Ga2O3, ZnO, and diamond) and heterostructures (including 2D/3D) are gaining more and more interest for advanced applications. The symposium is aimed to discuss current status of WBG technology and new frontiers in this research field.


In the last 20 years, WBG semiconductors, in particular SiC and group III-Nitrides, experienced tremendous improvements in terms of materials quality, and are now employed in a variety of devices for high power/high frequency electronics, optoelectronics and sensing. From the materials side, the 4H-SiC polytype reached the highest quality and large area substrates (up to 150 mm diameter) are nowadays available for industrial applications. On the other hand, the research on cubic polytype (3C) is still in progress, with the aim of improving heteroepitaxy on hexagonal SiC or Silicon substrate. To date, GaN based optoelectronic devices (LED, lasers) and high-electron-mobility transistors (HEMTs) have been almost exclusively developed from heteroepitaxial materials on large diameter foreign substrates (sapphire, SiC, Si), eventually followed by layer transfer process. More recently, high quality bulk GaN and AlN substrates start to be available for research and devices. Notwithstanding these progresses on materials quality, several issues still remain to be addressed to exploit the full potential of SiC and GaN. Among the most relevant issues for SiC power devices are the reduction of interface traps density at SiO2/4H-SiC interfaces limiting the carrier mobility MOSFETs, activation of implanted dopants, contacts optimization on n- and p-type doped layers. The development approaches for normally-off HEMTs, gate dielectrics technology and thermal management are critical issues for GaN power devices.

Besides SiC and GaN, alternative WBG materials, such as Ga2O3, ZnO, and diamond, are currently the object of increasing interest. Furthermore, WBG nanostructures (e.g. nanowires and nanorods) and novel 2D/3D heterojunctions formed by the integration of graphene or other 2D materials with WBG semiconductors are under consideration for novel device applications.

The symposium will serve as a forum for experts from academia and industry to discuss the critical issues in the state-of-the-art SiC and GaN technologies, and wide space will be given to new frontiers in WBG materials and devices.

Hot topics to be covered by the symposium:

  • SiC homo- and hetero-epitaxy
  • SiC device physics (MOS interfaces, contacts, doping by ion implantation, reliability...)
  • III-N homo- and hetero-epitaxy (nucleation layer, interface control,...)
  • Bulk GaN growth and device processing
  • GaN based HEMTs technology (contacts, dielectrics, approaches to normally off transistors, ...)
  • High voltage Schottky diodes on GaN
  • III-Nitrides for optoelectronics, photovoltaics and power electronics
  • ZnO for electronics and sensing
  • Ga2O3 growth and devices processing
  • Thermal management in GaN and oxide devices
  • Integration of 2D materials (graphene, TMDs) with group III-Nitrides or SiC
  • Wide-bandgap materials for sensors, MEMS and NEMS
  • Advanced characterizations (AFM, TEM, optical, electrical,…) of Wide-bandgap materials and heterostructures

Scientific committee members:

  • Daniel Alquier (Univ. Tours, France)
  • Eldad Bahat-Treidel (FBH Berlin, Germany)
  • Matteo Bosi (CNR-IMEM, Italy)
  • Didier Chaussende (CNRS-SIMAP, France)
  • Gabriel Ferro (Univ. Lyon, France)
  • Filippo Giannazzo (CNR-IMM, Italy)
  • Philippe Godignon (CNM, Barcelona, Spain)
  • Peter Gammon (University of Warwick, United Kingdom)
  • Antonino La Magna (CNR-IMM, Italy)
  • Mike Leszczynski (UNIPRESS, Poland)
  • Farid Medjdoub (Univ. Lille, France)
  • Adrien Michon (CNRS-CRHEA, France)
  • Teresa Monteiro (Univ. Aveiro, Portugal)
  • Pawel Prystawko (UNIPRESS, Poland)
  • Fabrizio Roccaforte (CNR-IMM, Italy)
  • Sebastiano Ravesi (STMicroelectronics, Italy)
  • Rositza Yakimova (Linkoping University, Sweden)
  • Konstantinos Zekentes (FORTH, Greece)
  • Marcin Zielinski (NOVASiC, France)

Invited speakers:

  • Yvon Cordier (CNRS-CRHEA, France)
  • Martin Feneberg (OVGU Magdeburg, Germany)
  • Ferdinando Iucolano(STMicroelectronics, Italy)
  • H.X. Jiang (Texas Tech University; USA)
  • Birgit Kallinger (IISB Fraunhofer, Germany)
  • Atsushi Nishikawa (ALLOS, Germany)
  • Dominique Planson (University of Lyon, France )
  • Guylaine Poulin-Vittrant (University of Tours, France)


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Symposium organizers
Anelia KAKANAKOVALinköping University

Department of Physics, Chemistry and Biology (IFM), SE-581 83 Linköping, Sweden
Bela PECZInstitute for Technical Physics and Materials Science

Centre for Energy Research, Hungarian Academy of Sciences (HAS-MTA), 1121 Budapest, Konkoly Thege 29-33, Hungary
Giuseppe GRECOConsiglio Nazionale delle Ricerche – Institute for Microelectronics and Microsystems (CNR-IMM)

Strada VIII, 5, 95121, Catania, Italy
Piotr KRUSZEWSKIInstitute of High Pressure Physics (UNIPRESS)

Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw Poland