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Monolithic and heterogeneous integration of advanced materials & devices on silicon

The symposium aims to gather scientists working on monolithic and heterogeneous integration to expand silicon technology. It is an evolution of a series of symposia that attracted a large number of attendees over the years. This research field paves the way towards highly functionalized Si-based technologies that can address challenges in our societies.


The microelectronics industry has delivered faster and efficient computing devices at a remarkably consistent pace for several decades now. This achievement is mainly due to the classic silicon MOS transistor, which allowed the device scaling down, while improving speed and energy consumption. These benefits led to the rise of high performance and affordable computers, to mobile & low power devices. More recently, the performance demand is pulled by new markets driven by societal needs like the Internet-of-thing, ultra-fast data communication, cognitive systems, application in life-sciences and new computing paradigms. However, transistors cannot scale down indefinitely. The microelectronics industry is therefore looking beyond the classic silicon transistor to secure the future of a new generation of devices. But the best candidates are likely to be those that can be integrated with conventional silicon chip technology. The integration of new materials, like alternative semiconductors or oxides, with conventional silicon electronics will open up a wide range of applications, from ubiquitous low-power devices to photonic based interconnects and quantum information processors. The symposium aims to highlight novel and innovative approaches that allow monolithic and heterogeneous integration on silicon baseline technology, either for CMOS applications (e.g. steep slope switches) or integrated photonics (e.g. monolithic lasers and silicon–organic hybrid modulators on a Si platform). The scope includes fundamental materials understanding, using novel integration schemes and/or state-of-the art modelling, or targeting new fields of application. The focus will be on the fabrication, characterization, and simulation (semi-empirical or ab-initio) of materials considered as non-standard for Si technology, such as strained SiGe, (Si)GeSn(C) etc.; compound semiconductors (III-V, II-VI); oxides, nitrides; and two- dimensional materials (graphene, BN, MX2). Contributions related to innovative hetero-integration techniques (advanced heteroepitaxy, layer transfer, wafer bonding, microstructure printing, self-assembly etc.) will be encouraged. Finally, a particular attention will be given to devices and applications demanding an interdisciplinary approach such as RF applications, biomedical or environmental sensing concepts realized on a semiconductor platform (THz sensing and SERS with semiconductor plasmonics), and to materials innovations that aim at addressing new computing paradigms such as quantum and neuromorphic computation. The productive interaction across disciplines will help materials scientists to drive the exciting transition towards higher-value, highly functionalized Si-based microelectronics, supporting technology that can address today’s and tomorrow’s societal needs.

Hot topics to be covered by the symposium

Materials science, characterization and simulation:  

  • Group IV and compound semiconductors:
  • SiGe, Ge, and (Si)GeSn(C) 3D, 2D, 1D, and 0D heterostructures, semiconductors on insulators (SOI, GOI, sSOI, etc.).
  • Arsenides, phosphides, nitrides and antimonides, II-VI compounds

Oxides and nitrides: 

  • Functional perovskites, ZnO, GaN and heterostructures, oxides with resistive or metal insulator transition, topological insulators, piezoelectric materials

2 dimensional materials:         

  • Graphene and carbon nanotubes, Calchogenides, Boron Nitride

Structural and electronic modelling:

  • Atomistic/continuum simulations of strain release processes, growth simulations; multiscale approaches, ab initio/tight binding modelling of electronic and optical properties of films and nanostructures 

Integration Techniques:  

Advanced heteroepitaxy:

  • Selective growth or selective deposition on patterned substrates, epitaxial lateral overgrowth, self- assembly techniques.

Layer Transfer:

  • Wafer bonding, Layer release techniques, Microstructure printing

3D integration:

  • Monolithic sequential integration, Die to wafer, Through Silicon Via techniques, 2.5D interposers. 


Data processing and communication:

  • Quantum computing and communication, Advanced CMOS scaling; high-power & RF frequency devices; ultra low power electronic; new transistor geometries, Integrated photonics; IR and THz lasers; CMOS-Si electro-optical integration 

Life-Sciences application and environmental sensors:

  • Semiconductor plasmonics for SERS, THZ sensing, gas sensors etc., integration with piezo-materials for MEMS-like sensors and opto-mechanics

Device Simulation:

  • Advanced TCAD methods, nanoelectronic device simulation

List of invited speakers:

  • R. Calarco (PDI Berlin, Germany), «Epitaxial growth of van der Waals bonded halcogenides-based superlattices»
  • M. Brehm (JKU Linz, Austria), «On site controlled and advanced Ge/Si quantum dots»
  • H. Liu (U.C.London, UK), «Monolithically Integrated III-V Quantum Dot Light Sources on Silicon»
  • T. Ernst (CEA/LETI, France), «Heterogeneous integration for novel generations of integrated systems»
  • S. Christiansen (MPI Erlangen, Germany), «3D nano-architectures on Si platforms»
  • Monica De Seta (Roma Tre, Italy),  «Towards a THz quantum cascade laser based on silicon heterostructures»
  • V. Kaganer (PDI Berlin, Germany), «In-depth characterization of defects in heteroepitaxial semiconductors by X-ray»
  • N. Cousineau (INP/CNRS, France), «CMOS circuits and monolithic integration for power semiconductor devices»
  • B. Vincent (Coventor/LAM), «Advanced Semiconductors Processing using Virtual fabrication»
  • G. Isella (Politecnico di Milano, Italy), «Ge and SiGe heterostructures for near- and mid-IR integrated photonics»
  • G. Patriarche (CNRS, France), «Molecular beam epitaxy of GaAs nanowires in a transmission electron microscope»
  • M. Salvalaglio (TUD Dresden, Germany), «Phase-field simulations of heteroepitaxial growth»

List of scientific committee members:

  • J.-P. Raskin (UC de Louvain, Belgium)
  • A. Spiesser (AIST, Japan)   
  • M. Zöllner (IHP, Germany)
  • S. Ballandras (Frequensys, France)
  • M. Myronov (U Warwick, UK)
  • S. Abel (IBM, Switzerland)
  • J.-N. Aqua (Institut des NanoSciences de Paris, France)   
  • G. Katsaros (Institute of Science and Technology, Austria)
  • E. Tournie (CNRS/Univ. Montpellier, France)
  • M. Houssa (KUL, Belgium)
  • M. Camarda (CNR Catania, Italy)

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Symposium organizers

Kapeldreef 75, 3001 Leuven, Belgium

+32 (0)16 28 86 91

Parc Technologique des Fontaines – Chemin des Franques - F38190 Bernin - France

+33 4 76 92 94 76
Francesco MONTALENTIUniversity of Milano-Bicocca

Dipartimento di Scienza dei Materiali, Via R. Cozzi 55, 20125 Milan - Italy

+39 0264485226
Inga Anita FISCHERInstitut für Halbleitertechnik, Universität Stuttgart

Pfaffenwaldring 47, 70569 Stuttgart, Germany

+49 711 68568006