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Epitaxial integration of dissimilar materials: challenges and fundamentals

We aim to bring together researchers who co-integrate complementary functionalities by the heteroepitaxial growth of dissimilar materials. The challenges due to the heterogeneity of materials properties will be at the heart of the symposium, with both experimental and theoretical points of view.


Desirable physical functionalities (e.g. charge transport, photonics, ferro- or piezo-electricity, magnetism, spin-dependent effects, thermal phenomena) can be realized in well-defined crystalline materials (SiGe, III-Vs, Heusler alloys, etc.) but some also in organic materials such as molecular semiconductors. For applications as diverse as low-power optoelectronics for the Internet of Things, biosensors, energy harvesting and quantum or neuromorphic computing, it is highly promising to deeply integrate multiple functionalities into a single “hybrid” material system. Among the possible strategies to achieve integration, heteroepitaxy of dissimilar materials may be able to provide both very large scale integration of new functionalities, compatibility with existing technological platforms and hence cost reduction. However, this approach faces the challenges of materials property heterogeneity between dissimilar material groups: chemical mismatch, lattice mismatch, crystal structure and polarity, 2D/3D growth, incompatible growth kinetics, etc. As ever more ambitious heteroepitaxial systems are investigated, now is a perfect time to bring together researchers working in different hetero-material systems to explore the common theme of property integration across dissimilar materials. The symposium will span a wide range of hetero-integration strategies (e.g. III-V/Si, oxides/semiconductors, organic/inorganic, 2D materials on 3D templates). It will cover both theoretical and experimental approaches to understanding and overcoming the problems associated with each hybrid material strategy, such as interfacial effects, extended defects and chemical mixing/segregation. Experimental topics will include both synthesis and advanced characterization (e.g. atomic-scale microscopy, neutron or X-ray diffraction / reflectivity). Theoretical topics will include both ab initio property prediction and multi-scale modelling approaches to heteroepitaxy (e.g. Monte Carlo, phase-field, molecular dynamics).

Hot topics to be covered by the symposium:

  • 2D materials (Graphene, Chalcogenides, h-BN, phosphorene) interacting with 3D materials.
  • Group III-V semiconductors (arsenides, phosphides, nitrides and antimonides) on group IV semiconductors (Si, Ge, Sn or SOI).
  • Oxides (Functional perovskites, ZnO, ferroelectric, piezoelectric) on semiconductors (group III-V or group IV).
  • Organic semiconductors on conventional semiconductors (III-V or Si) or on 2D materials.
  • Integration of topological and chiral materials

Each topic will include state-of-the-art contributions on epitaxy, advanced characterization (e.g. atomic resolution microscopy) and cutting-edge theory (e.g. multi-scale modelling).

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Symposium organizers
Charles CORNETFOTON laboratory – INSA Rennes

INSA Rennes, 20, Avenue des Buttes de Coësmes, CS 70839, F-35708 Rennes Cedex 7, France

+33 (0)2 23 23 83 99

Kapeldreef 75, 3001 Leuven, Belgium

+32 (0)16 28 86 91
Gavin BELLUniversity of Warwick

Department of Physics, Coventry CV4 7AL, UK

+44 24 7652 3489