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SEMICONDUCTORS AND NANODEVICES

I

Materials research for group IV semiconductors: growth, characterization and technological developments III

Group IV semiconductors lie at the heart of many electronic and photovoltaic devices. Issues associated with bulk silicon continue to be important, but substantial fundamental challenges also exist for other group IV bulk materials and associated alloys, nanostructures, nanocomposites, thin/thick films and heterostructures. Advances in device performance are underpinned by new defect engineering procedures, development of novel growth techniques, and improvements in advanced diagnostic tools. Point and extended defects remain at the center of interest, as are surfaces, and in some cases their engineering represents an option for new functionalities.

In this edition of the Symposium, the organizers intend to hold a specific session dedicated to extended defects in cubic silicon carbide, so abstracts in this area are particularly welcome.

This symposium will include, but will not be exclusively limited to, the following topics:

Crystal growth of group IV semiconductors:

  • Modeling of defect generation and modeling of crystal growth
  • Crystal growth for solar applications
  • Growth of group IV alloy crystals
  • Wafering technologies and defect evolution in wafering processes
  • Large diameter crystal growth with emphasis on 450mm diameter wafers
  • Low quality polycrystalline silicon refinement, including control of dopants

Nanostructures of/ on group IV semiconductors:

  • Layer deposition for electronic and photovoltaic applications
  • Nanocrystalline materials
  • Quantum wires, vertical membranes for FinFETs, and quantum dots

Heteroepitaxy on group IV semiconductors:

  • Perovskites on silicon for photovoltaic applications
  • Selective epitaxy for advanced electronic applications
  • Strain engineering in strained layer epitaxy
  • Heterogeneous integration of Si or Ge with III-V epitaxial device quality layers
  • Defects at heteroepitaxial merging on patterned Si
  • Epitaxial deposition of nitrides and SiC on silicon substrates
  • Growth of 2D materials (e.g. graphene, silicene and germanene) on silicon
  • Modelling and simulation of epitaxial structures
  • Ge, GeSn, GeSiSn on silicon

Thin layer technology:

  • Deposition of amorphous and crystalline thin layers
  • Surface passivation of silicon for photovoltaics
  • Silicon membranes

Fundamental research on point defects and extended defects in group IV semiconductors:

  • Defects associated with light induced degradation of solar silicon
  • Vacancy and interstitial related point defect complexes with oxygen, nitrogen, carbon, and hydrogen
  • Complexes of dopants with intrinsic point defects and light elements
  • Diffusivity of impurities and intrinsic point defects
  • Modelling and simulation of extended defects

Gettering and defect engineering:

  • Gettering of metallic impurities and impurity precipitation in silicon
  • Interaction of metals with dopants, impurity atoms and extended defects
  • Defect engineered and defect-free silicon wafers
  • Dislocation engineering by substrate and process optimization

Technological applications for group IV semiconductors:

  • Thin layer and multilayer solar cells
  • High speed and high frequency electronic devices
  • Power devices
  • SOI and sSOI devices
  • Photonics and light emitting devices
  • Spintronics
  • Thermo-mechanical systems

Confirmed invited speakers and tentative titles

  • Erik Bakkers (Technische Universiteit Eindhoven, The Netherlands), “Ge/GeSn nanowires”.
  • Sebastian Bonilla (University of Oxford, UK), “Ion-charged dielectrics for surface passivation in semiconductor optoelectronic devices”.
  • Valérie Depauw (IMEC, Belgium), “Epitaxial foils for photovoltaics: investigating what can kill their minority-carrier lifetime”.
  • Stefan Estreicher (Texas Tech University, USA), “Ab initio calculation of defects in Si and SiGe”.
  • Gabriel Ferro (University of Lyon, France), “How to grow fully (100) oriented SiC/Si/SiC/Si multi stack”.
  • Anna Fontcuberta I Morral (EPFL, Switzerland), “Challenges and successes of III-V nanostructures integrated on Si”.
  • Naoki Fukata (NIMS, Japan), “Characterization of impurity doping and stress in Si/Ge and Ge/Si core–shell nanowires”.
  • Masataka Hourai (SUMCO Corporation, Japan), “Review and some comments for the development of point defect controlled CZ-Si crystals and their application to future power devices”.
  • Francesco La Via (CNR-IMM, Italy), “Reduction of 2D and 3D defects in 3C-SiC”.
  • Natalio Mingo (CEA-Grenoble, France), “Thermal conductivity of defective silicon carbide”.
  • Osamu Nakatsuka (Nagoya University, Japan), “Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications”.
  • Tim Niewelt (Fraunhofer ISE, Germany), “Bulk defects causing light-induced degradation of crystalline silicon”.
  • Hele Savin (Aalto University, Finland), “Development of black silicon”.
  • Bengt Svensson (University of Oslo, Norway), “Elementary point defects in mono-crystalline silicon and their interaction with impurities - some recent advances”.
  • Michio Tajima (Meiji University, Japan), “Quantification of carbon in Si by photoluminescence at liquid nitrogen temperature after electron irradiation”.
  • Jason Tan (SunPower, USA), “Challenges in the supply of silicon for mass production of solar cell architectures capable of >25% efficiency”.
  • Hidekazu Tsuchida (CRIEPI, Japan), “Characterization and control of defects in 4H-SiC epilayers”.
  • Xuegong Yu (Zhejiang University, China), “Silicon based graphene heterojunction solar cell”.

Scientific Committee:

Simona Binetti (University Milano-Bicocca, Italy), Stefan Estreicher (Texas Tech University, USA), Giovanni Isella (L-NESS, Politecnico di Milano, Italy), Koichi Kakimoto (Kyushu University, Japan), Katerina Kusova (Czech Academy of Sciences, Prague, Czech Republic), Sergio Pizzini (University Milano-Bicocca, Italy), Eddy Simoen (IMEC and Ghent University, Belgium), Bengt G. Svensson (University of Oslo, Norway), Michio Tajima (Meiji University, Japan), Yuepeng Wan (GCL, China), Jun Xu (Nanjing University, China).

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Symposium organizers
Chioko KANETAFujitsu Laboratories Ltd.

10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

+81 46 250 8212
kaneta.chioko@jp.fujitsu.com
Deren YANGZhejiang University

State Key Lab of Silicon Materials Zheda Road 38# Hangzhou 310027 P. R. China

+86 571 87951667
mseyang@zju.edu.cn
Gudrun KISSINGER

IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany

+49 335 5625 388
gkissinger@ihp-microelectronics.com
John MURPHYUniversity of Warwick

School of Engineering, University of Warwick, Coventry, CV4 7AL, UK

+44 24 765 75378
john.d.murphy@warwick.ac.uk
Leo MIGLIOUniversity of Milano Bicocca

Dept. of Materials Science Building U5, Via Cozzi 55, I-20125 Milano Italy

+39 02 6448 5217
leo.miglio@mater.unimib.it