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Carrier transport, photonics and sensing in group IV-based nano devices

The new composites and nanostructures of group IV materials provide a platform for advanced devices for Nanoelectronics, Photonics and Sensors. The symposium will focus on group IV materials, nanostructures and related devices with the objective to bring together scientists working in different application fields.


The scope of the proposed symposium will include experimental and theoretical innovations related to group IV nanoelectronics, nanophotonics and nanosensing. An emphasis will be made on high mobility materials suitable for fast devices, light emission and light absorption.

These topics have attracted an increasing attention in the recent years for various applications, including infrared communication and imaging. The very critical issues are therefore carrier transport properties and lifetimes which will be reflected in the symposium program.

The photonic devices of particular interest are detectors, light emitting sources, waveguides, optical modulators and CMOS devices. Additional topics in the symposium scope are defect characterization, engineering and the impact of crystal quality on the properties of electronic and photonic devices.

Moreover, integrated photonic devices are recently emerging in the field of biological and chemical sensing allowing ultra-high sensing performances and efficient CMOS-compatible systems.

Simulations and calculations of nanodevices, predicting their physical properties and performances are vital to successful device design and optimization. This is particularly important when novel Si-Ge-Sn-C alloys and structures are involved; and in case of nano scale devices, where conventional approximations can no longer be applied.

The symposium will bring together the whole chain starting with novel technological developments in the field of material synthesis; subsequently, material characterization, device design and fabrication; and finally, device characterization, simulation and modeling. New applications will be welcome as well.

Hot topics to be covered by the symposium:

  • Fabrication and characterization of group IV nanostructures, nanodevices and nanosensors
  • Carrier transport in nanodevices
  • Optoelectronic materials and nanodevices using Si-based heterostructures and nanostructures
  • Integration of photonics with Si CMOS technology
  • Strain band-gap engineering and carrier transport in CMOS
  • Si-based optical modulators, switches and detectors
  • Si-based waveguide technology and nanodevices
  • Luminescence in Si-based materials
  • Photonic crystals
  • Integrated waveguide sensing
  • Nanomaterials for life science applications
  • Nanoscale biosensors
  • Defect engineering and characterization

List of confirmed invited speakers:

  • Jun Luo, (Chinese Academy of Science) China: Integration of advanced high-k/metal gate stack in nano-scaled transistors
  • Eddy Simeon, (IMEC) Belgium: The effect of defects on transport in nanodevices
  • Douglas Paul, (Glasgow University) UK,: Ge and GeSn nanophotonic devices for mid-infrared sensing”
  • Steve Koester, (University of Minnesota) USA: 2D materials for nanoelectronics, nanophotonics and nanosensing”
  • Philippe M. Fauchet, (Vanderbilt University) USA: Electrical and optical silicon-based biosensors
  • Maksym Myronov, (The University of Warwick) UK: Epitaxy of advanced group IV alloys for nanodevices
  • Xue Feng, (Tsinghua University) China: Si photonic towards nano-scaled devices
  • Yakov Roizin, (TowerJazz & Tel Aviv University) Israel : VLSI scaling roadmap and integration of novel materials with silicon
  • Wolfgang Skorupa (Helmholtz-Zentrum Dresden-Rossendorf) Germany: Advanced thermal processing of group-IV materials and beyond

Tentative list of scientific committee members:

  • Mehmet Ozturk, (NC State University) USA
  • Matty Caymax, (IMEC) Belgium
  • Andrej Kuznetsov, (University of Oslo) Norway
  • Tian-Ling Ren, (Tsinghua University) China
  • Yuji Yamamoto, (IHP) Germany
  • Dimitris Tsoukalas, (National Technical University of Athens) Greece
  • Peter Pichler, (Fraunhofer IISB) Germany
  • Rasit Turan, (Middle East Technical University) Turkey
  • Lisik Zbigniew (Technical University of Lodz) Poland
  • Guilei Wang, (Chinese Academy of Science) China
  • Slotte Jonatan, (Aalto University) Finland
  • Wei.Xin Ni, (Linköping University) Sweden
  • Lis Nanver, (University of Twente) The Netherlands
  • Aleksey Andreev, (Hitachi Cambridge Laboratory) UK
  • Renong Liang, (Tsinghua University) China
  • Jan Linnros, (KTH Royal Institute of Technology) Sweden
  • Luca Maresca, (University of Napoli Federico II) Italy
  • Chao Zhao, (Chinese Academy of Science) China
  • Rick Wise, (University of Arkansas) USA


Manuscripts will be published in a reputable and refereed journal: Materials Science Journal: Materials in Electronics, Springer.

Graduate Student awards:

Five selected member of scientific committee will rank independently the work of young scientists. Top 3 presentations/posters will be critically reviewed and a winner will be selected.


  • EpiLuvac, Lund, Sweden
  • Nocilis Materials, Stockholm, Sweden

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Symposium organizers

Via Ferdinando Stagno D’Alcontres, 98168 Messina, Italy

Arie RUZINTel Aviv University

Haim Levanon st., 69978 Tel Aviv, Israel

+972 3 6405214
Henry H. RADAMSONKTH Royal Institute of Technology

Brinellv.8, 10044 Stockholm, Sweden / Affiliation 2: Chinese Academy of Science, 100029 Beijing, China

+46 70 2287355 & +86 18311498633 &

Campus de St Jérôme – Case 142 – 13397 Marseille Cedex 20, France

+33 491 28 91 63 / +33 687 28 23 48