Materials for Electronics & Photonics
LAdvanced Doping and Alloying in Semiconductors: from Materials to Devices
Doping and alloying are two of the most powerful approaches for tailoring and exploiting the functionality of semiconductors. By controlling carrier concentration, composition, band structure, strain, defects, and interfaces, these strategies enable a wide range of electronic, optical, magnetic, and quantum functionalities.
Scope:
In 1931, Wolfgang Pauli famously remarked, “One shouldn’t work on semiconductors, that is a filthy mess; who knows whether any semiconductors exist.” History has shown the opposite: semiconductors not only exist, but have become the foundation of modern technology. Their extraordinary utility arises not simply from their intrinsic properties, but from our ability to deliberately tailor them. Among the most powerful tools for doing so are doping and alloying.
Doping, the intentional introduction of impurities into a semiconductor, is essential for controlling carrier concentration, conductivity type, optical response, defect chemistry, and in some cases even magnetic or superconducting behavior. Alloying provides another fundamental degree of freedom: by combining different semiconductor constituents—such as in SiGe, GeSn, III-V ternary and quaternary compounds, or emerging mixed-anion and mixed-cation systems—it becomes possible to engineer band structure, lattice constant, strain, confinement, polarization, and heterointerface properties. Together, doping and alloying underpin the operation of transistors, photodetectors, solar cells, LEDs, lasers, power devices, etc...
Today, however, the field is entering a new phase in which classical concepts are being pushed far beyond their conventional limits. As device dimensions shrink and functionality requirements expand, new challenges emerge in achieving ultra-high dopant activation, ultra-low contact resistance, and metastable compositions. At the same time, new opportunities are opening through non-equilibrium processing and advanced materials design. Examples include hyperdoping, where dopant concentrations far exceed equilibrium solubility limits and enable novel optical, electronic, and magnetic properties; highly-mismatched and complex semiconductor alloys, which offer an expanded compositional tunability; and 2D materials, where substitutional doping, intercalation, alloying, and moiré/interface engineering provide routes to previously inaccessible functionalities. In these systems, doping and alloying become tools for creating entirely new physical regimes.
This symposium will be highly interdisciplinary, attracting participants from both academia and industry across the semiconductor, nanoelectronics, optoelectronics, plasmonics, superconductor, magnetism and quantum technologies communities. No similar symposium has been held in recent years, making it a natural fit for “Materials and technologies for photonics and electronics”.
Hot topics to be covered by the symposium:
- Hyperdoping beyond solubility limits
- Advanced processing: implantation, epitaxy, laser annealing, rapid thermal processing
- Alloy design in group-IV, III-V, II-VI, oxide, nitride, and chalcogenide semiconductors
- Semiconductor device concepts enabled by doping and alloying
- Optoelectronic devices based on hyperdoped Si, Ge, III-V and GeSn including photodetectors at X-ray, visible, infrared, and THz wavelength
- Hyperdoped semiconductors (Si, Ge and III-V) for plasmonics: tunable plasmonic frequency by doping concentration, plasmonic structural design
- Hyperdoped semiconductors (Si, Ge, SiGe and GeSn) for future field-effect transistors
- Highly mismatched alloys, such as GeSn, SiGeSn, GaAsN, GaPN …
- Diamond, Si, Ge and SiC based superconductors: hyperdoping, superconducting properties, applications for quantum technology
- Advanced characterization of semiconductors at the atomic scale: dopant distribution, alloy composition, defects, and structural and electronic properties
- First-principle calculation regarding the impurity and defect configuration
- Challenges for doping emerging materials, such as 2D semiconductors, ultra-wide bandgap semiconductors
- New concepts for doping, such as polarization-induced hole doping in wide-bandgap semiconductors
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enrico.napolitani@unipd.itNo. 1001, Daxue Rd., East Dist., Hsinchu City 300093, Taiwan
gechang@nycu.edu.twBautzner Landstr. 400, 01328 Dresden, Germany
s.zhou@hzdr.deDongguan, Guangdong, 523808 P. R. China
yuanye@sslab.org.cn