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Materials for Electronics & Photonics

J

Defect-induced Effects and Defect Engineering in Functional Materials

Since 2012, the symposium has successfully hosted ten editions. It highlights recent advances in the fundamental understanding and applications of defect-related properties in low-dimensional, quantum and emerging materials and structures, including semiconductors, dielectrics, ferroics, and topological insulators, among others.

Scope:

Defects are ubiquitous in materials and play a crucial role in determining their structural, electrical, optical, and magnetic properties. Defect engineering has recently emerged as a powerful and versatile strategy for tailoring functionalities across diverse material systems, including low-dimensional materials (e.g., 2D materials, van der Waals heterostructures, and freestanding membranes), correlated oxides (e.g., perovskite and fluorite oxides), conventional semiconductors (e.g., Si and SiC), and ultra-wide-bandgap semiconductors (e.g., Ga2O3).

Defects can induce emergent phenomena, enabling novel functionalities such as magnetism in nominally non-magnetic hosts, symmetry-breaking–driven piezoelectric, pyroelectric, or ferroelectric responses, and defect-mediated optical and spin states for tunable energy, electronic, photonic, and quantum applications. Examples include magnetism in non-magnetic oxides and graphene with vacancies; defect-induced electromechanical responses in centrosymmetric perovskites and fluorite oxide films; and optically active or quantum-relevant states in diamond (with NV centers), MoS2, hexagonal boron nitride (with boron vacancies), SiC (with silicon vacancies), and Si (with carbon-related complexes). These developments underscore the importance of advanced defect-engineering strategies for the deterministic creation and manipulation of functional defects. Whether achieved through ion, electron, or neutron beams, or through advanced material synthesis, precise control over defect placement remains a key challenge in realizing tailored material functionalities.

By bringing together researchers across disciplines, this symposium will focus on precisely engineering defects in novel materials and nanostructures, characterizing them with advanced techniques, and functionalizing them for quantum, neuromorphic, photonic, spintronic, energy, and sensing applications. The symposium highlights how these advances in defect engineering are driving next-generation technologies and enabling transformative developments across materials science, condensed-matter physics, nanotechnology, and device engineering. This is the central focus of the symposium.

Hot topics to be covered by the symposium:

  • Theory and multiscale modelling of defects in solids
  • Defects in low-dimensional materials, heterostructures and emerging materials (perovskites, topological insulators, 2D materials, and freestanding oxides)
  • Defect engineering for quantum technologies, spintronics and electronic devices
  • Artificial intelligence and data-driven approaches in defect research
  • Defect-induced phenomena (magnetism, resistive switching, optical activity)
  • Application of defects in quantum and neuromorphic technologies
  • Advanced characterization of defects (electron and scanning probe microscopy, synchrotron, positron and neutron techniques)
  • Defect engineering in materials synthesis and fabrication, including 2D materials, thin film growth, heterostructure fabrication, and freestanding membranes
  • Defect-mediated phase transition, electromechanical coupling, and related emergent phenomena
  • Role of defects in resistive switching, thermoelectric, electrochemical, and other energy conversion phenomena
  • Defects in state-of-the-art solid-state electronic devices

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Symposium organizers
Daesung PARKTechnical University of Denmark (DTU)

Anker Engelunds Vej 1, Bygning 310, 2800 Kongens Lyngby, Denmark

daepa@dtu.dk
Jie LIUState Key Laboratory of Heavy Ion Science and Technology, Institute of Modern Physics, Chinese Academy of Sciences

509 Nanchang Road, Lanzhou 730000, Gansu Province, China

j.liu@impcas.ac.cn
Nikolai A. SOBOLEVUniversidade de Aveiro

Departamento de Física and I3N, Campus de Santiago, 3810-193 Aveiro, Portugal

sobolev@ua.pt
Yonder BERENCÉN (Main organizer)Helmholtz-Zentrum Dresden-Rossendorf

Bautzner Landstraße 400, 01328 Dresden, Germany

y.berencen@hzdr.de