Plenary 2 - Friday - July 28


Session chair: B. Daudin


09:00 - 09:45: Plenary talk 4

   A path toward electrically injected AlGaN-based deep UV laser diodes
  R. Kirste, S. Mita, P. Reddy, Q. Guo,1 B. Sarkar, F. Kaess, J. Tweedie, R. Collazo, Z. Sitar*

North Carolina State University, Materials Science and Engineering, Raleigh, NC 27695, USA;

Adroit Materials, Inc., 2054 Kildaire Farm Rd, Cary, NC 27518, USA


Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors lasers have not been realized. UV optoelectronic devices have a variety of applications such as sterilization, water purification, spectroscopy, and biological sensing. AlGaN-based technology developed on single crystalline AlN substrates and impurity control in the active region offers a pathway to address all these challenges. In addition to low dislocation density, reduction in non-radiative centers and compensating point defects in the active region are required to achieve high IQE. In order to understand the influence of point defects on radiative lifetime and ultimately achieve high IQE, we have carried out an extensive study of vacancy and carbon control via Fermi level and supersaturation management for various MQW structures grown on bulk AlN substrates. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth parameters on optical quality from the influence of dislocations and achieve record high IQE of >95% at 260 nm. Using this technology, we achieved lasing at room temperature in optically pumped AlGaN-based MQW structures with a threshold as low as 6 kW/cm2 and lasing wavelengths from 237 to 281 nm, and for the first time demonstrated population inversion in electrically injected lasers.


09:45 - 10:00: Break


10:00 - 10:45: Plenary talk 5

   Laser light source for projection devices
  Guillaume Arthuis
  BBright, France


Laser Light sources, the future of video projection. Even if high brightness laser projection is stil in its early stages, the latest improvements in GaN laser should trigger an acceleration of laser projection market adoption in digital cinema and other large venue projection applications. Laser baser projection provides multiple advantages : scalable light power, native primary colors, longer life cycles. BBright develops high power laser light sources and packaging technologies for red, green, and blue color. This presentation will cover the following items: - General review on video projection devices, how it works, and what are the main markets - Laser light sources in video projection, pro and cons - Other applications of laser light sources (medical, illumination)


10:45 - 11:15: Coffee break


11:15 - 12:00: Plenary talk 6

   GaN Power Devices: Development, Manufacturing, and Application
  Thomas Detzel
  Infineon Technologies Austria AG


Compact devices with unique switching performance, this has been the promise of GaN power devices since several years. And now we are experiencing the exciting time when this is becoming reality. Advanced GaN technologies will be a decisive step towards energy efficiency and size & weight reduction in a variety of applications which today are still dominated by silicon devices. This plenary talk will provide a technology performance comparison between GaN and Si power devices and will try to answer the question where GaN will succeed. The development and implementation of benchmark GaN-on-Si enhancement mode power technology in a high-volume Si manufacturing line leading to Europe?s most comprehensive power device fab will be presented. A key success factor is an outstanding R&D eco-system which will be highlighted by sharing our contribution to the European funding project PowerBase in which 39 partners throughout the entire value chain, ranging from base-material to final application, teamed up to pioneer the path for a wide adoption of GaN power technology in a broad application spectrum. First successful uses of 600V enhancement mode GaN products in high performance applications will be shown. Examples will include highest efficiency high power switched mode power supplies for server and telecom applications as well as high frequency DCDC stages resulting in unique increase of power density and reduction of form factor.


12:00 - 12:15: Closing ceremony - J.Y. Duboz - B. Gil